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TSC[Taiwan Semiconductor Company, Ltd]
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Part No. |
TSC5302DCP TSC5302D TSC5302DCH
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OCR Text |
...Emitter
BVCEO = 400V BVCBO = 800v Ic = 2A VCE (SAT), = 1.0V @ Ic / Ib = 1A / 0.2A
Features
Built-in free-wheeling diode makes efficie...us us us V V V V uA uA V Conditions Symbol Min Typ Max Unit
tON tSTG tF
tF
Vf
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Description |
High Voltage NPN Transistor with Diode
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File Size |
102.62K /
5 Page |
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it Online |
Download Datasheet |
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Taiwan Semiconductor Co., Ltd. TSC[Taiwan Semiconductor Company, Ltd]
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Part No. |
TS13003ACTB0 TS13003A TS13003ACTA3
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OCR Text |
800v Ic = 1.5A VCE (SAT), = 0.8V @ Ic / Ib = 0.5A / 0.1A
Pin assignment: 1. Emitter 2. Collector 3. Base
Features
High voltage. High ...us us us V V V uA uA V
Conditions
Symbol
Min
Typ
Max
Unit
Note : pulse test: pu... |
Description |
ECONOLINE: RBM - New Micro Size SIP 6 Package- Industry Standard Pinout- 3kVDC Isolation- UL94V-0 Package Material- Efficiency to 85% High Voltage NPN Transistor
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File Size |
42.09K /
3 Page |
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it Online |
Download Datasheet |
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Advanced Power Technolo... ADPOW[Advanced Power Technology]
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Part No. |
APT8024LVR APT8024B2VR APT8024B2VR_04 APT8024B2VR04
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OCR Text |
800v 33A
0.240
POWER MOS V
(R)
MOSFET
B2VR
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode po...us and Foreign patents pending. All Rights Reserved.
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Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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File Size |
135.03K /
4 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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Part No. |
APT8011JLL_04 APT8011JLL APT8011JLL04
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OCR Text |
800v 51A 0.110
POWER MOS 7
(R)
R
MOSFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enh...us and Foreign patents pending. All Rights Reserved.
050-7093 Rev A
2-2004
3.3 (.129) 3.6 (... |
Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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File Size |
108.41K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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Part No. |
APT7M120S APT7M120B
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OCR Text |
...F
5
VGS = 0V, VDS = 0V to 800v
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge ...us and Foreign patents pending. All Rights Reserved.
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Description |
N-Channel MOSFET
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File Size |
249.66K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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