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  800v us Datasheet PDF File

For 800v us Found Datasheets File :: 795    Search Time::1.484ms    
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    SMN03T80IS

KODENSHI KOREA CORP.
Part No. SMN03T80IS
OCR Text ...ication features ? bv dss =800v min. ? low gate charge: q g =19nc (typ.) ? low drain-source on resistance: r ds(on) =4.2 ? (max.) ...us - 372 - ns reverse recovery charge (note 4,5) q rr - 1.8 - uc note: 1. repeated rati...
Description SWITCHING REGULATOR APPLICATION

File Size 388.33K  /  8 Page

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    TS13003MVCTB0 TS13003MVCTA3G

Taiwan Semiconductor Compan...
Taiwan Semiconductor Company, Ltd
Part No. TS13003MVCTB0 TS13003MVCTA3G
OCR Text ...Y BVCEO BVCBO IC VCE(SAT) 400V 800v 1.5A 0.8V @ IC / IB = 1A / 0.25A Features High Voltage High Speed Switching Block Diagram S...us us us us us us us us us us us us Resistive Load Switching Time (Ratings) Note: pulse test: ...
Description High Voltage NPN Transistor

File Size 441.89K  /  6 Page

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    UF102GS UF100GS

Pan Jit International Inc.
Part No. UF102GS UF100GS
OCR Text ...0.4 0.01 0.1 1.0 10 50-200v 600-800v t=25c a o 400v 0.6 0.8 1.0 1.2 1.4 1.6 20 0 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 40 60 80 100 120 t=25c j o v =50-400v v =600-800v rrm rrm t=75c j o t =125 c j o reverse current, ua percent of rated pe...
Description GLASS PASSIVATED JUNCTION ULTRAFAST RECOVERY RECTIFIER

File Size 424.39K  /  2 Page

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    TSC[Taiwan Semiconductor Company, Ltd]
Part No. TSC5302DCP TSC5302D TSC5302DCH
OCR Text ...Emitter BVCEO = 400V BVCBO = 800v Ic = 2A VCE (SAT), = 1.0V @ Ic / Ib = 1A / 0.2A Features Built-in free-wheeling diode makes efficie...us us us V V V V uA uA V Conditions Symbol Min Typ Max Unit tON tSTG tF tF Vf --- --- ...
Description High Voltage NPN Transistor with Diode

File Size 102.62K  /  5 Page

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    Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
Part No. TS13003ACTB0 TS13003A TS13003ACTA3
OCR Text 800v Ic = 1.5A VCE (SAT), = 0.8V @ Ic / Ib = 0.5A / 0.1A Pin assignment: 1. Emitter 2. Collector 3. Base Features High voltage. High ...us us us V V V uA uA V Conditions Symbol Min Typ Max Unit Note : pulse test: pu...
Description ECONOLINE: RBM - New Micro Size SIP 6 Package- Industry Standard Pinout- 3kVDC Isolation- UL94V-0 Package Material- Efficiency to 85%
High Voltage NPN Transistor

File Size 42.09K  /  3 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. APT8024LVR APT8024B2VR APT8024B2VR_04 APT8024B2VR04
OCR Text 800v 33A 0.240 POWER MOS V (R) MOSFET B2VR Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode po...us and Foreign patents pending. All Rights Reserved. ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 135.03K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT8011JLL_04 APT8011JLL APT8011JLL04
OCR Text 800v 51A 0.110 POWER MOS 7 (R) R MOSFET G S D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enh...us and Foreign patents pending. All Rights Reserved. 050-7093 Rev A 2-2004 3.3 (.129) 3.6 (...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 108.41K  /  5 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT7M120S APT7M120B
OCR Text ...F 5 VGS = 0V, VDS = 0V to 800v Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge ...us and Foreign patents pending. All Rights Reserved. ...
Description N-Channel MOSFET

File Size 249.66K  /  4 Page

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    ICE2A165 ICE2A365 ICE2A265 ICE2A280 ICE2A180

INFINEON[Infineon Technologies AG]
Part No. ICE2A165 ICE2A365 ICE2A265 ICE2A280 ICE2A180
OCR Text ... h i n t e g ra t e d 6 5 0 V / 800v CoolM O STM P o w e r M a n a g em e n t & S u p p l y Never stop thinking. CoolSETTM-F2...us to continuously improve the quality of this document. Please send your proposal (including a refe...
Description Off-Line SMPS Current Mode Controller with integrated 650V/800v CoolMOS⑩
IC,SMPS CONTROLLER,CURRENT-MODE,DIP,8PIN,PLASTIC

File Size 1,494.65K  /  23 Page

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