8.13 pdf Datasheet P4 Full Text Search --- IC-ON-LINE


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8.13 Datasheet PDF File

For 8.13 Found Datasheets File :: 2379 Search Time::3.204ms
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				NEC[NEC]
Part No.	UPD75P0116 UPD75P0116CU UPD75P0116GB-3BS-MTX
OCR Text	...Hz operation) * 0.488, 0.977, 7.813 kHz (main system clock: at 1.0 MHz operation) * 0.977, 1.953, 15.625 kHz (main system clock: at 2.0-MHz operation) External: 3 Internal: 4 External: 1 Internal: 1 * Main system clock oscillation RC oscill...
Description	4-BIT SINGLE-CHIP MICROCONTROLLER
File Size	266.33K / 62 Page	View it Online	Download Datasheet

				MAXIM[Maxim Integrated Products]
Part No.	MAX8570 MAX8570EUT MAX8570EUT-T MAX8570-MAX8575 MAX8571 MAX8571EUT MAX8571EUT-T MAX8572 MAX8572EUT MAX8572EUT-T MAX8573 MAX8573EUT MAX8573EUT-T MAX8574 MAX8574EUT MAX8574EUT-T MAX8575 MAX8575EUT MAX8575EUT-T
OCR Text	...1 0.1 1.216 1.2137 -50 14.85 14.813 2.4 -4 15 1.226 1.236 1.2383 +50 15.15 15.187 4.4 28 0.267 0.108 0.540 1.5 2.4 2 A s s ns V V A A TYP MAX 5.50 2.65 35 1 UNITS V V A A %/V %/mA V nA V A V Circuit of Figure 3, VOUT = 15V, ILOAD = 5mA,...
Description	High-Efficiency LCD Boost with True Shutdown
File Size	630.27K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	SA601DK SA601
OCR Text	... 58.725 - j 50.83 49.928 - j 38.813 44.82 - j 30.191 39.268 - j 24.502 34.664 - j 18.59 31.48 - j 14.217 27.887 - j 10.77 25.741 - j 8.2607 23.584 - j 6.2715 S21 6.2863U 150.58 5.8096U 140.47 5.3895U 130.33 5.0428U 120.5 4.6877U 112.03...
Description	Low voltage LNA and mixer - 1GHz
File Size	182.66K / 11 Page	View it Online	Download Datasheet

				Semelab(Magnatec) TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	D1028UK D1028
OCR Text	... 0.708 0.729 0.754 0.78 0.802 0.813 0.832 0.851 0.861 0.871 0.884 0.892 0.901 0.909 0.913 0.923 0.926 0.934 0.936 0.939 0.945 0.948 0.952 0.955 0.959 0.958 0.963 0.963 0.967 0.967 0.971 0.968 0.973 0.976 0.972 0.975 0.977 0.978 0.977 0.982 ...
Description	Gold Metallised Multi-Purpose Silicon DMOS RF FET(300W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应300W-28V-175MHz,推挽) METAL GATE RF SILICON FET
File Size	125.76K / 7 Page	View it Online	Download Datasheet

				Ericsson Microelectronics
Part No.	PTF10021
OCR Text	...30 20 100 21 A-1 234 569 813 VDD = 28 V 10 IDQ = 360 mA f = 1.5 GHz 0 1 2 3 4 5 0 Input Power (Watts) Package 20237 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 10 W, IDQ = 360 mA, f =...
Description	30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦，1.4-1.6 GHzGOLDMOS场效应晶体管 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
File Size	277.83K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10137
OCR Text	...0.679 0.713 0.742 0.770 0.792 0.813 0.834 0.849 0.865 0.874 0.884 0.896 0.902 0.912 0.917 0.921 0.929 0.932 0.937 0.943 0.943 0.950 0.948 0.952 0.958 0.958 0.966 0.964 0.961 0.962 0.958 0.967 0.967 0.967 0.969 0.963 0.969 0.969 S22 An...
Description	12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管 12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
File Size	174.57K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPC8126K UPC8126K-E1 UPC8158K UPC8101GR UPC8104GR UPC8105GR UPC8110GR UPC8125GR UPC8126GR UPC8129GR UPC8139GR-7JH
OCR Text	...35 MHz, PIFin = -12 dBm fRFin = 813 MHz, PRFin = -11 dBm fMODout = 948 MHz + fI/Q fI/Qin = 2.625 kHz VI/Qin = 500 mVP-P (Single ended) I/Q (DC) = Ib/Qb (DC) = VCC/2 Data Rate: 42 kbps, RNYQ: = 0.5 MOD Pattern: All Zero VPS: Low to High, TE...
Description	900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS
File Size	187.44K / 20 Page	View it Online	Download Datasheet

				NEC, Corp. NEC[NEC]
Part No.	UPC8163TB UPC8163TB-E3 UPC8106TB UPC8109TB
OCR Text	...EF 1.0 Units 1 200.0 mUnits/ 41.813 -196.16 hp MARKER 1 850.0 MHz MARKER 2 1.9 GHz 1 1 2 2 START STOP 0.100000000 GHz 3.000000000 GHz START STOP 0.100000000 GHz 3.000000000 GHz IF port S11 Z REF 1.0 Units 1 200.0 mUnits...
Description	SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR TELEPHONE 硅单.0 GHz的频率上的移动电话转
File Size	131.49K / 16 Page	View it Online	Download Datasheet

				AD[Analog Devices] Analog Devices, Inc.
Part No.	AD595A AD595AD AD595AQ AD595C AD595CD AD595CQ AD594CQ AD594AQ AD595 AD594CD AD594A AD594 AD594AD AD594C AD595CDZ
OCR Text	...3.1 101 200 250 300 401 503 606 813 1022 1233 1445 1659 1873 2087 2302 2517 2732 2946 3160 3374 3588 3801 4015 4228 4441 4655 4869 5084 Type K Voltage mV -5.891 -5.550 -5.141 -4.669 -4.138 -3.553 -2.920 -2.243 -1.527 -.777 -.392 0 .397 .798...
Description	Monolithic Thermocouple Amplifier with Cold Junction Compensation Pretrimmed for Type K Thermocouples Monolithic Thermocouple Amplifier with Cold Junction Compensation Pretrimmed for Type J Thermocouples Monolithic Thermocouple Amplifiers with Cold Junction Compensation 单片放大器热电偶冷端补偿
File Size	136.49K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF630N IRF630NL IRF630NS
OCR Text	... ns TJ = 25C, IF = 5.4A --- 542 813 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-...
Description	Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.30ohm，身份证\u003d 9.3A Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A) Power MOSFET(Vdss=200V Rds(on)=0.30ohm Id=9.3A)
File Size	152.79K / 11 Page	View it Online	Download Datasheet

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