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  8.0 25.0a Datasheet PDF File

For 8.0 25.0a Found Datasheets File :: 35591    Search Time::5.109ms    
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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text ...10 seconds Max. 43 30 150 3.8 200 1.3 20 590 22 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)*...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 152.65K  /  10 Page

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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text .... IRF3415 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.5V 5.0V BOTTOM 4.5V TOP 1000 100 I D , Drain-to-Source Current (A) I D , D...0 ID = 37A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Curr...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 90.69K  /  8 Page

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...10 seconds Max. 57 40 180 3.8 200 1.3 20 530 28 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)*...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

File Size 180.61K  /  10 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... 10 seconds Max. 17 12 60 3.8 79 0.53 20 150 A 7.9 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text 8 HEXFET (R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tap...0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 D1 D1 D2 D2 N-Ch VDSS 20V ...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ...lectronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is ...0 90 7.2 Min 30 Typ Max Units V Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7A VD...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...lectronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is ...0 90 7.2 Min 30 17 25 Typ Max Units V m V A mA Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7A VD...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ...lectronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is ...0 20 2.0 IGSS QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf (off) Min 30 Typ - 17 Max - 25...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ...lectronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is ...0 50 6.0 IGSS QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf (off) Min 30 Typ - 17 Max - 25...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ...ching Losses S S S G 1 8 7 A D D D D Description This new device employs advanced HEXFET Power MOSFET technology to achieve a...0 20 100 IGSS QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf (off) Min 30 Typ - 17 Max - 25...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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