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For 6w 6w Found Datasheets File :: 2736    Search Time::3.36ms    
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    APT50M38JFLL

ADPOW[Advanced Power Technology]
Part No. APT50M38JFLL
OCR Text ...t.] @ 25C VDD = 0.5 VDSS RG = 0.6w ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 91 364 1.3 5 300 600 (VGS = 0V, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 2.2 9.0 16 33 Tj = 125C Tj = 25C Tj ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT50M38JLL

Advanced Power Technology
Part No. APT50M38JLL
OCR Text ...VGS = 15V VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 91 364 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.38K  /  2 Page

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    APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL

ADPOW[Advanced Power Technology]
Part No. APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text ...t.] @ 25C VDD = 0.5 VDSS RG = 0.6w ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 71 284 1.3 15 300 600 (VGS = 0V, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 2.6 10 17 34 Tj = 125C Tj = 25C Tj ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT50M50JLC APT5010JLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50M50JLC APT5010JLC
OCR Text ... VGS = 15V VDD = 0.5 VDSS RG = .6w ID = ID[Cont.] @ 25C ns 14.4 MIN TYP MAX UNIT Amps Volts ns C 77 (Body Diode) 308 1.3 2 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100...
Description POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

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    APT50M50L2FLL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2FLL
OCR Text ...nt.] @ 25C VDD = 0.5 VDSS RG =0.6w ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 89 356 1.3 15 300 600 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C 2.6 10 17 34 Tj = 125C...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.74K  /  2 Page

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    APT50M50L2LL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2LL
OCR Text ...A I 110 VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 87 348 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 50.41K  /  2 Page

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    APT50M60L2VFR

ADPOW[Advanced Power Technology]
Part No. APT50M60L2VFR
OCR Text ...t.] @ 25C VDD = 0.5 VDSS RG = 0.6w ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 77 308 1.3 5 300 600 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C 2.6 10 17 34 Tj = 125C ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.66K  /  2 Page

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    APT50M60L2VR

ADPOW[Advanced Power Technology]
Part No. APT50M60L2VR
OCR Text ... IN 210 VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX UNIT Amps Volts ns C 77 308 1.3 (VGS = 0V, IS = -ID[Cont.]) 680 Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt =...
Description POWER MOS V 500V 77A 0.060 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 33.79K  /  2 Page

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    APT50M65 APT50M65B2FLL APT50M65LFLL

ADPOW[Advanced Power Technology]
Part No. APT50M65 APT50M65B2FLL APT50M65LFLL
OCR Text ...t.] @ 25C VDD = 0.5 VDSS RG = 0.6w ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 67 268 1.3 5 270 540 (VGS = 0V, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 1.8 6.2 16 29 Tj = 125C Tj = 25C Tj ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.95K  /  2 Page

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    APT8011JLL APT8011

ADPOW[Advanced Power Technology]
Part No. APT8011JLL APT8011
OCR Text ...VGS = 15V VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 51 204 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.67K  /  2 Page

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