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  512mbit xdr tm dramc-die Datasheet PDF File

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    HY27SS08121M HY27US16121M Y27US08121M

Hynix Semiconductor
Part No. HY27SS08121M HY27US16121M Y27US08121M
Description Search --To HY27US081M
(HY27xSxx121M) 512mbit (64Mx8bit / 32Mx16bit) NAND Flash

File Size 799.86K  /  43 Page

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    K4S511632C K4S511632C-KC K4S511632C-L1H K4S511632C-L1L K4S511632C-L75 K4S511632C-L7C K4S511632C-KC_L75 K4S511632C-KC_L1H

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S511632C K4S511632C-KC K4S511632C-L1H K4S511632C-L1L K4S511632C-L75 K4S511632C-L7C K4S511632C-KC_L75 K4S511632C-KC_L1H K4S511632C-KC_L1L K4S511632C-KC_L7C K4S511632C-KC/L1H K4S511632C-KC/L1L K4S511632C-KC/L75 K4S511632C-KC/L7C
Description 8M x 16Bit x 4 Banks Synchronous DRAM Data Sheet
DDP 512mbit SDRAM 12兆内

File Size 130.41K  /  11 Page

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    RD25050-W-AU RD25100-W-AU RD251000-W-AU RD25200-W-AU

TRANSYS Electronics Limited
Part No. RD25050-W-AU RD25100-W-AU RD251000-W-AU RD25200-W-AU
Description 50 V, 25 A, rectifier automotive die
100 V, 25 A, rectifier automotive die
1000 V, 25 A, rectifier automotive die
200 V, 25 A, rectifier automotive die

File Size 167.57K  /  1 Page

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    Infineon Technologies A...
Part No. HYB18T512160AF-5 HYB18T512800AF-3.7 HYB18T512400AF-5 HYB18T512800AF-5 HYB18T512160AF-3.7 HYB18T512400AF-3.7 HYB18T512400AF-3S
Description 512-Mbit DDR2 SDRAM
512mbit Double Data Rate (DDR2) Component

File Size 2,154.96K  /  117 Page

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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4J52324QC K4J52324QC-BJ12 K4J52324QC-BC20 K4J52324QC-BJ14
Description 512mbit GDDR3 SDRAM 512MB的GDDR3 SDRAM

File Size 1,253.79K  /  57 Page

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    INFINEON[Infineon Technologies AG]
Part No. SAK-C505CA-4RC SAK-C505CA-LC C505CA-4RC SAA-C505CA-4RC SAA-C505CA-LC
Description 8-Bit Microcontrollers - High temperature 8-Bit CMOS microcontroller (T=150°C ) with mask-programmable ROM, bare die, with CAN, (20 MHz)
8-bit Single-Chip Microcontroller (Bare Die Delivery)

File Size 320.02K  /  22 Page

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    M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF

Numonyx B.V
Part No. M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF
Description 256 or 512mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package

File Size 444.00K  /  24 Page

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    M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF

Numonyx B.V
Part No. M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF
Description 256 or 512mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package

File Size 448.75K  /  24 Page

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    IRG4CC50WB

Hittite Microwave Corporation
International Rectifier
Part No. IRG4CC50WB
Description IGBT Die in Wafer Form 600 V Size 5 WARP Speed
IRG4CC50WB IGBT Die in Wafer Form

File Size 23.15K  /  1 Page

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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4N51163QC-ZC2A
Description ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM
512mbit gDDR2 SDRAM

File Size 1,416.01K  /  64 Page

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