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  4-sot-143 Datasheet PDF File

For 4-sot-143 Found Datasheets File :: 1636    Search Time::5.047ms    
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    APT5010JLL

ADPOW[Advanced Power Technology]
Part No. APT5010JLL
OCR Text ...petitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1800 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDS...SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.35K  /  2 Page

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    APT5010JN APT5012JN APT5012

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT5010JN APT5012JN APT5012
OCR Text ...ER MOSFETS 500 48 192 30 520 4.16 500 43 172 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Pow...SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8....
Description POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET

File Size 60.42K  /  4 Page

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    APT5010JVFR

ADPOW[Advanced Power Technology]
Part No. APT5010JVFR
OCR Text ...0 450 3.6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear ...SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.63K  /  4 Page

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    APT5010JVR

Advanced Power Technolo...
Advanced Power Technology, Ltd.
Part No. APT5010JVR
OCR Text ...0 450 3.6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear ...SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 71.26K  /  4 Page

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    APT50GF120JRD

ADPOW[Advanced Power Technology]
Part No. APT50GF120JRD
OCR Text ...m Case for 10 Sec. M 1200 4.5 5.5 2.9 3.5 6.5 3.4 4.1 1.0 2 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25C)...SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) ...
Description Fast IGBT & FRED 1200V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.

File Size 51.80K  /  4 Page

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    APT50M38JFLL

ADPOW[Advanced Power Technology]
Part No. APT50M38JFLL
OCR Text ...petitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDS...SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 53.39K  /  2 Page

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    APT50M38JLL

Advanced Power Technology
Part No. APT50M38JLL
OCR Text ...petitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDS...SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.38K  /  2 Page

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    APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL

ADPOW[Advanced Power Technology]
Part No. APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text ...DV NF A I 500 71 284 30 40 595 4.76 300 71 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3200 STAT...SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT50M50JLC APT5010JLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50M50JLC APT5010JLC
OCR Text ...petitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDS...SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=...
Description POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT50M50JVFR

ADPOW[Advanced Power Technology]
Part No. APT50M50JVFR
OCR Text ...0 700 5.6 -55 to 150 300 77 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Sourc...SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=...
Description POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.13K  /  4 Page

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