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  4-23 Datasheet PDF File

For 4-23 Found Datasheets File :: 230180    Search Time::1.828ms    
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    2SC5010 2SC5010-T1 2SC5010-T1-T2

NEC Corp.
Part No. 2SC5010 2SC5010-T1 2SC5010-T1-T2
OCR Text ...3 V, IC = 10 mA, f = 2 GHz) : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz) 2 1.6 0.1 1....23.9 -35.4 -46.6 -57.7 -67.8 -77.3 -86.7 -95.3 -104.3 -112.0 -120.5 -128.4 -136.2 -144.2 -151.8 -159...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
128 x 128 pixel format, LED or EL Backlight available

File Size 59.95K  /  10 Page

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    2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB

NEC[NEC]
NEC Corp.
Part No. 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text 4 PINS SUPER MINI MOLD FEATURES * Small Package * High Gain Bandwidth Product (fT = 10 GHz TYP.) * Low Noise, High Gain * Low Voltage Op...23.2 -24.8 -26.0 -27.0 -27.3 -28.3 -28.3 -29.2 -29.5 -31.0 -31.7 -33.7 -34.3 -36.3 -36.5 -38.0 -40.0...
Description L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 51.33K  /  8 Page

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text 4 PINS SUPER MINI MOLD FEATURES * Small Package * High Gain Bandwidth Product (fT = 12 GHz TYP.) * Low Noise, High Gain * Low Voltage Op...23.8 -26.8 -29.5 -32.3 -33.3 -34.7 -36.7 -38.1 -39.6 -40.9 -42.0 -43.2 -44.4 -46.1 -47.4 -49.4 -50.7...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 48.18K  /  8 Page

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    2SC5080

HITACHI[Hitachi Semiconductor]
Part No. 2SC5080
OCR Text ...at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5080 Absolute Maximum Ratings (Ta = 25C...23 4.58 4.14 3.76 3.42 ANG. 157.3 139.6 126.1 115.7 107.6 101.0 95.2 90.7 86.4 82.6 S12 MAG. 0.0329 ...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 47.56K  /  8 Page

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    2SD1113 2SD1113K

HITACHI[Hitachi Semiconductor]
Part No. 2SD1113 2SD1113K
OCR Text ...= 300 V, RBE = VCE = 2 V, IC = 4 A*1 I C = 4 A, IB = 40 mA*1 I C = 4 A, IB = 40 mA*1 I C = 4 A, IB1 = -IB2 = 40 mA I C = 4 A, IB1 = -IB2 = 40 mA Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 50 10 Area of ...
Description Silicon NPN Triple Diffused

File Size 31.56K  /  5 Page

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    2SD1126 2SD1126K

HITACHI[Hitachi Semiconductor]
Part No. 2SD1126 2SD1126K
OCR Text ...0.6 0.5 mA IB = 0 -2 5 4 2 0 1 2 3 4 Collector to emitter voltage VCE (V) 5 1.0 3 10 Collector current IC (A) 30 3 2SD1126(K) Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation...
Description Silicon NPN Triple Diffused

File Size 32.50K  /  6 Page

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    2SD1133 2SD1134

HITACHI[Hitachi Semiconductor]
Part No. 2SD1133 2SD1134
OCR Text ...* Tj Tstg 1 2SD1133 70 50 5 4 8 40 150 -45 to +150 2SD1134 70 60 5 4 8 40 150 -45 to +150 Unit V V V A A W C C 2SD1133, 2SD1134 Electrical Characteristics (Ta = 25C) 2SD1133 Item Collector to base breakdown voltage Collector ...
Description Silicon NPN Triple Diffused

File Size 32.05K  /  5 Page

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    2SD1135

HITACHI[Hitachi Semiconductor]
Part No. 2SD1135
OCR Text ... Tj Tstg 1 Ratings 100 80 5 4 8 40 150 -45 to +150 Unit V V V A A W C C 2SD1135 Electrical Characteristics (Ta = 25C) Item Symbol Min 80 5 -- 1 Typ -- -- -- -- -- -- -- 10 40 Max -- -- 0.1 200 -- 1.5 2 -- -- Unit V V m...
Description Silicon NPN Triple Diffused

File Size 31.07K  /  5 Page

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    2SD1137

HITACHI[Hitachi Semiconductor]
Part No. 2SD1137
OCR Text ...C. Tj Tstg 1 Rating 100 100 4 4 5 1.8 40 150 -45 to +150 Unit V V V A A W W C C 2SD1137 Electrical Characteristics (Ta = 25C) Item Symbol Min 100 4 -- -- 50 25 Collector to emitter saturation voltage Note: 1. Pulse test. VCE (sa...
Description Silicon NPN Transistor
Silicon NPN Triple Diffused

File Size 30.23K  /  5 Page

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    2SD1138

HITACHI[Hitachi Semiconductor]
Part No. 2SD1138
OCR Text ...C = 0 VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 10 V, IC = 500 mA*2 I C = 500 mA, IB = 50 mA*2 VCB = 4 V, IC = 50 mA VCB = 100 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage C...
Description Silicon NPN Transistor
Silicon NPN Triple Diffused

File Size 30.91K  /  6 Page

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