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  3a single Datasheet PDF File

For 3a single Found Datasheets File :: 16467    Search Time::1.204ms    
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    5EHM1S 3EZM1S 3EZM4 3EZM4S 5EFM1S 5EFM1SC 3EXM1S 3EXM4 3EXM4S 6VM1 6VM1S 6VM2 6VM2S 6VM4 6VM4C 6VM4S 6VM4SC 6VM1C 6VM1SC

Tyco Electronics
Part No. 5EHM1S 3EZM1S 3EZM4 3EZM4S 5EFM1S 5EFM1SC 3EXM1S 3EXM4 3EXM4S 6VM1 6VM1S 6VM2 6VM2S 6VM4 6VM4C 6VM4S 6VM4SC 6VM1C 6VM1SC 5EFM1 5EFM1C 5EFM4 5EFM4C 5EFM4S 5EHM1 5EHM4S
OCR Text ... Current Rating HM 5A FM 05A XM 3a ZM 3a .01 2 15 .05 13 29 Note 4 Customer Transformer Primaries VM (4-Voltage) 10 22 45 44 40 30 Neutral Power On/Off Note 3 K Frequency-MHz .15 .5 1 5 14 14 23 39 18 21 40 46 19 26 46 43 22 40...
Description Power Entry Module with Optional RFI Power Line Filters for General and Medical Applications

File Size 304.43K  /  8 Page

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    RSD-300

Mean Well Enterprises Co., Ltd.
Part No. RSD-300
OCR Text ...2v 24v 48v 12v 24v 48v 22.5a 11.3a 5.7a 25a 12.5a 6.3a 25a 12.5a 6.3a 0 ~ 22.5a 0 ~ 11.3a 0 ~ 5.7a 0 ~ 25a 0 ~ 12.5a 0 ~ 6.3a 0 ~ 25a 0 ~ 12...single output dc-dc converter r s d - 3 0 0 s e r i e s input terminal pin no. assignment : output t...
Description 300W Railway single Output DC-DC Converter

File Size 207.76K  /  4 Page

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    TPCS821409

Toshiba Semiconductor
Part No. TPCS821409
OCR Text ...ice Drain power operation (Note 3a) dissipation single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Drain power dissipation single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) single pulse avalanche energy ...
Description Lithium Ion Battery Applications

File Size 225.02K  /  7 Page

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    IRHF593130SCS IRHF597130SCS

International Rectifier
Part No. IRHF593130SCS IRHF597130SCS
OCR Text ... 0.24 ? v gs = -12v, i d = -4.3a resistance v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -1.0ma g fs forward tr...single event effect, safe operating area international rectifier radiation hardened mosfets have bee...
Description -100V 100kRad Hi-Rel single P-Channel TID Hardened MOSFET in a TO-205AF package

File Size 202.50K  /  8 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ... ID = 3.5A VDS = -15V, ID = -2.3a VDS = 24V, V GS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VDS = -24V, VGS = 0V, TJ = 125C...single Pulse Avalanche Energy (mJ) 80 BOTTOM ID 0.89A 1.6A 2.0A 0.12 0.10 0.08 60 ...
Description Power MOSFET(Vdss= -30V)

File Size 128.20K  /  10 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ... -2.4 --- S VDS = -15V, ID = -2.3a --- -2.0 VDS = 24V, VGS = 0V A --- -25 VDS = 24V, VGS = 0V, TJ = 55C --- 100 VGS = -20V nA --- -100 VGS =...single Pulse Avalanche Energy (mJ) 120 0.60 ID -0.58A -1.0A BOTTOM -1.3a TOP 90 0.40 ...
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    TPCS820507 TPCS8205

Toshiba Semiconductor
Part No. TPCS820507 TPCS8205
OCR Text ...e single-device operation (Note 3a) single-device operation (Note 3a) Weight: 0.035 g (typ.) Circuit Configuration W PD (1) 0.6 PD (2) EAS IAR EAR Tch Tstg 0.35 32.5 5 0.05 150 -55~150 mJ A mJ C C Note: (Note ...
Description Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications

File Size 831.49K  /  7 Page

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    TPC8216-H

Toshiba Semiconductor
Part No. TPC8216-H
OCR Text ...ice Drain power operation (Note 3a) dissipation single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) single-device Drain power operation (Note 3a) dissipation single-device value (t = 10 s) (Note 2b) at dual operation (Note ...
Description Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?H)
Field Effect Transistor Silicon N-Channel MOS Type (U-MOS楼碌-H)

File Size 202.43K  /  7 Page

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    TPC8213-H

Toshiba Semiconductor
Part No. TPC8213-H
OCR Text ...ice Drain power operation (Note 3a) dissipation single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Drain power dissipation single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) single-pulse avalanche energy ...
Description High-Efficiency DC拢炉DC Converter Applications

File Size 316.65K  /  7 Page

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    TPC8212-H

Toshiba Semiconductor
Part No. TPC8212-H
OCR Text ...ice Drain power operation (Note 3a) dissipation single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) single-device Drain power operation (Note 3a) dissipation single-device value (t = 10 s) (Note 2b) at dual operation (Note ...
Description High-Efficiency DC/DC Converter Applications

File Size 438.25K  /  7 Page

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