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  320v Datasheet PDF File

For 320v Found Datasheets File :: 703    Search Time::1.39ms    
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    CPC7582 CPC7582BA CPC7582BA-TR CPC7582BB CPC7582BB-TR

Clare Inc.
Clare, Inc.
Clare Inc
Part No. CPC7582 CPC7582BA CPC7582BA-TR CPC7582BB CPC7582BB-TR
OCR Text ...rent: +25C Vsw (differential)= -320v to Gnd Vsw (differential)= -60V to +260V +85C Vsw (differential)= -330V to Gnd Vsw (differential)= -60V to +270V -40C Vsw (differential)= -310V to Gnd Vsw (differential)= -60V to +250V RDSON (SW1,SW2): +...
Description Line Card Access Switch SPECIALTY TELECOM CIRCUIT, PDSO16

File Size 144.34K  /  12 Page

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    CPC7581 CPC7581BA CPC7581BA-TR CPC7581BB CPC7581BB-TR

Clare Inc
Clare, Inc.
Clare Inc.
Part No. CPC7581 CPC7581BA CPC7581BA-TR CPC7581BB CPC7581BB-TR
OCR Text ...rent: +25C Vsw (differential)= -320v to Gnd Vsw (differential)= -60V to +260V +85C Vsw (differential)= -330V to Gnd Vsw (differential)= -60V to +270V -40C Vsw (differential)= -310V to Gnd Vsw (differential)= -60V to +250V RDSON (SW1,SW2): +...
Description Line Card Access Switch
EDGE SWITCH, HARDENED 1-FSM 5-UTP 12-VDC SC

File Size 119.87K  /  12 Page

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    BSP32409 BSP324L6327

Infineon Technologies AG
Part No. BSP32409 BSP324L6327
OCR Text ...erse diode dv/dt IS=0.17A, VDS=320v, di/dt=200A/s, Tjmax=175C kV/s V W C Gate source voltage ESD Class (JESD22-A114-HBM) Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 ...
Description SIPMOS Power-Transistor
SIPMOS?/a> Power-Transistor

File Size 333.06K  /  8 Page

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    TIG032TS

Sanyo Semicon Device
Part No. TIG032TS
OCR Text ...S Conditions IC=2mA, VGE=0V VCE=320v, VGE=0V VGE=6V, VCE=0V Ratings min 400 10 10 typ max Unit V A A Marking : G032 Continued on next page. * : Conduct 100% screening of dv / dt (slope of collector voltage at the time of turn-off) ...
Description N-Channel IGBT Light-Controlling Flash Applications

File Size 47.13K  /  5 Page

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    SW740

List of Unclassifed Manufacturers
ETC
Part No. SW740
OCR Text ...Gate-Source Leakage Reverse VDS=320v, Tc=125 VGS=30V,VDS=0V VGS=-30V, VDS=0V 400 (Tc=25 unless otherwise noted) SW740 Value Test Conditions Min Typ Max Units Parameter 0.4 - V V/ - 1 100 -100 uA nA nA On Characte...
Description N-Channel MOSFET

File Size 378.28K  /  6 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS730 JCS730B-O-B-N-B JCS730C-O-C-N-B JCS730R-O-R-N-A JCS730R-O-R-N-B JCS730S-O-S-N-B JCS730V-O-V-N-B JCS730F-O-F-N-B
OCR Text ...5 TJ VDS=400V,VGS=0V, TC=25 VDS=320v, IGSSF VDS=0V, TC=125 - 0.4 - V/ IDSS - - 10 100 100 A A nA VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=2.75A VDS = 40V, ID...
Description N-CHANNEL MOSFET

File Size 888.33K  /  14 Page

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    IRFP350LC

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP350LC
OCR Text ...DS = 400V, VGS = 0V A 250 VDS = 320v, VGS = 0V, T J = 125C 100 VGS = 20V nA -100 VGS = -20V 76 ID = 16A 20 nC VDS = 320v 37 VGS = 10V, See Fig. 6 and 13 --- VDD = 200V --- ID = 16A ns --- RG = 6.2 --- RD = 12, See Fig. 10 Between lead, --- ...
Description Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A) 功率MOSFET(减振钢板基本\u003d00V,的Rdson)\u003d 0.30ohm,身份证\u003d 16A条)

File Size 292.30K  /  8 Page

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    AP03N40AP-HF

Advanced Power Electronics Corp.
Part No. AP03N40AP-HF
OCR Text ...in-source leakage current v ds =320v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =1a - 11 17.5 nc q gs gate-source charge v ds =320v - 2.5 - nc q gd gate-drain ("miller") char...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 54.83K  /  4 Page

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    AP03N40AJ-HF

Advanced Power Electronics Corp.
Part No. AP03N40AJ-HF
OCR Text ...in-source leakage current v ds =320v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =1a - 11 17.5 nc q gs gate-source charge v ds =320v - 2.5 - nc q gd gate-drain ("miller") char...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 54.32K  /  4 Page

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    AP03N40AI-HF

Advanced Power Electronics Corp.
Part No. AP03N40AI-HF
OCR Text ...in-source leakage current v ds =320v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =1a - 11 17.5 nc q gs gate-source charge v ds =320v - 2.5 - nc q gd gate-drain ("miller") charge...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 56.14K  /  4 Page

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