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  30.0018 Datasheet PDF File

For 30.0018 Found Datasheets File :: 3514    Search Time::3.047ms    
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    1N5404G 1N5402G 1N5408G 1N5407G 1N5405G 1N5401G 1N5400G 1N5403G 1N5406G

Diodes, Inc.
DIODES[Diodes Incorporated]
Part No. 1N5404G 1N5402G 1N5408G 1N5407G 1N5405G 1N5401G 1N5400G 1N5403G 1N5406G
OCR Text ...40 7.20 1.20 4.80 Max -- 9.50 1.30 5.30 All Dimensions in mm @ TA = 25C unless otherwise specified Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate...
Description 3.0A GLASS PASSIVATED RECTIFIER 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD

File Size 57.85K  /  2 Page

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    1N5404 1N5408 1N5407 1N5405 1N5400 1N5401 1N5402 1N5403 1N5406

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. 1N5404 1N5408 1N5407 1N5405 1N5400 1N5401 1N5402 1N5403 1N5406
OCR Text ...404 400 280 400 5.0 500 1.2 0.5 30 5405 500 350 500 5406 600 420 600 5407 800 560 800 5408 1000 700 1000 Units V V V A A V mA pF a 1998 Fairchild Semiconductor Corporation 1N5400-1N5408 General Purpose Rectifiers (continued) ...
Description 3.0 Ampere General Purpose Rectifiers(平均整流3.0安培的通用整流 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

File Size 37.66K  /  2 Page

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    1N5532B 1N5532B-1 1N5535B 1N5535B-1 1N5534B 1N5534B-1 1N5524B 1N5524B-1 1N5546B 1N5546B-1 1N5518B 1N5518B-1 1N5531B-1 1N

Microsemi, Corp.
CDI-DIODE[Compensated Deuices Incorporated]
Compensated Devices Incorporated
Compensated Deuices Inc...
Part No. 1N5532B 1N5532B-1 1N5535B 1N5535B-1 1N5534B 1N5534B-1 1N5524B 1N5524B-1 1N5546B 1N5546B-1 1N5518B 1N5518B-1 1N5531B-1 1N5531B 1N5539B-1 1N5539B 1N5533B-1 1N5533B 1N5518 1N5519B 1N5519B-1 1N5520B 1N5520B-1 1N5521B 1N5521B-1 1N5522B 1N5522B-1 1N5523B 1N5523B-1 1N5525B 1N5525B-1 1N5526B 1N5526B-1 1N5527B 1N5527B-1 1N5528B 1N5528B-1 1N5529B 1N5529B-1 1N5530B 1N5530B-1 1N5536B 1N5536B-1 1N5537B 1N5537B-1 1N5538B 1N5538B-1 1N5540B 1N5540B-1 1N5541B 1N5541B-1 1N5542B 1N5542B-1 1N5543B 1N5543B-1 1N5544B 1N5544B-1 1N5545B 1N5545B-1
OCR Text ...0 19.0 20.0 22.0 24.0 25.0 28.0 30.0 33.0 20 20 20 20 10 5.0 3.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 26 24 22 18 22 26 30 30 30 35 40 45 60 80 90 90 100 100 100 100 100 100 100 100 1...
Description    LOW REVERSE LEAKAGE CHARACTERISTICS
Zener Diodes(榻?撼浜??绠?
Zener Diodes(齐纳二极 齐纳二极管(齐纳二极管)

File Size 98.41K  /  2 Page

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    2114 8610 8816 8640

GILWAY[Gilway Technical Lamp]
Part No. 2114 8610 8816 8640
OCR Text ...-2R C-2R C-2F C-2F C-2F 100 500 30 350 100 100,000 100.000 40,000 1,000 3,000 1,000 5,000 10,000 1,000 1,000 14.73 MAX 6.35 4.27 MAX Line No. Part No. Part No. Wire Miniature Lead Flanged Part No. Bi-Pin Filament Type Lif...
Description T-1 Subminiature Lamps

File Size 29.42K  /  1 Page

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    27C4096 W27C4096 W27C4096-12 W27C4096P-15 W27C4096-15 W27C4096P-12 W27C4096T-12 W27C4096T-15

Winbond Electronics
WINBOND[Winbond]
Part No. 27C4096 W27C4096 W27C4096-12 W27C4096P-15 W27C4096-15 W27C4096P-12 W27C4096T-12 W27C4096T-15
OCR Text ... (max.) Read operating current: 30 mA (max.) Erase/Programming operating current 30 mA (max.) Standby current: 100 A (max.) Single 5V power supply * +14V erase/+12V programming voltage * Fully static operation * All inputs and outputs di...
Description 256K X 16 ELECTRICALLY ERASABLE EPROM
256K ′ 16 ELECTRICALLY ERASABLE EPROM
From old datasheet system

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    2N2060A

Central Semiconductor, Corp.
TT electronics Semelab, Ltd.
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. 2N2060A
OCR Text ... V 0.002 10 2.0 mA nA 25 30 40 50 75 90 120 150 0.6 0.9 V -- hFE DC Current Gain IC = 100mA IC = 1mA IC = 10mA IC = 50mA IC = 50mA IC = 50mA f = 20MHz IE = 0 f = 1MHz IC = 0 f = 1MHz IC = 1mA f = 1kHz IC = 1mA f = 1kHz IC...
Description Dual Amplifier Transistor(Small Signal Dual Transistor in a TO-77 Hermetic Package具有放大器功能的双晶体管(TO-77封装两个小信号晶体管 双放大器晶体管(双小信号晶体管采用TO - 77气密封装)(具有放大器功能的双晶体管(至77封装两个小信号晶体管))
DUAL AMPLIFIER TRANSISTOR 500 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-002AF

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    2N2060CAN 2N2060J 2N2060JV 2N2060JX

Semicoa Semiconductor
Part No. 2N2060CAN 2N2060J 2N2060JV 2N2060JX
OCR Text ...EBO1 IEBO2 Test Conditions IC = 30 mA IC = 10 mA, RBE = 10 VCB = 100 Volts VCB = 80 Volts VCB = 80 Volts, TA = 150C VCE = xx Volts VCE = xx Volts, VEB = x Volts VCE = xx Volts VEB = 7 Volts VEB = 5 Volts 10 2 Min 60 80 10 2 10 Typ Max Unit...
Description Silicon NPN Transistor

File Size 206.90K  /  3 Page

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    2N2060 2N2060L JANTX2N2060 JANTX2N2060L JANTXV2N2060L JAN2N2060 JAN2N2060L JANTXV2N2060

MICROSEMI[Microsemi Corporation]
Part No. 2N2060 2N2060L JANTX2N2060 JANTX2N2060L JANTXV2N2060L JAN2N2060 JAN2N2060L JANTXV2N2060
OCR Text ...-Emitter Breakdown Voltage IC = 30 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc VEB = 5.0 Vdc IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (97...
Description NPN Dual Transistors
UNITIZED DUAL NPN SILICON TRANSISTOR

File Size 52.16K  /  2 Page

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    2N2904AL

Microsemi Corporation
Part No. 2N2904AL
OCR Text ...0 40 100 35 75 40 100 40 100 20 30 40 50 IC = 1.0 mAdc, VCE = 10 Vdc 175 450 175 450 IC = 10 mAdc, VCE = 10 Vdc hFE IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc 120 300 Collector-Emitter Saturation Voltage IC...
Description PNP SWITCHING SILICON TRANSISTOR

File Size 62.55K  /  3 Page

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    2N2904A 2N2905A

http://
BOCA[Boca Semiconductor Corporation]
Part No. 2N2904A 2N2905A
OCR Text ...IN 200 - 2N2904A-05A MAX 8.0 30 10 40 45 80 30 100 UNIT MHz pF pF ns ns ns ns ns ns - TO-39 Metal Can Package A B D G 2 1 3 All dimensions are in mm DIM A B C D E F G H J K L M IN MAX 8.50 9.39 7.74 8.50 6.09 6.60 ...
Description NPN SILICON PLANAR SWITCHING TRANSISTORS

File Size 40.70K  /  2 Page

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