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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
KBE00G003M-D411 KBE00G003M-D4110
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| OCR Text |
... 512m bit(64mx8) nand flash*2 / 256m bit(8mx8x4banks) mobile sdram*2 revision history the attached datasheets are prepared and approved b...p ulse repetition, where required, and internal verify and margining of data. even the write-intens... |
| Description |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
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| File Size |
1,254.33K /
89 Page |
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it Online |
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ELPIDA MEMORY INC
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| Part No. |
EDE2516AASE-4A-E EDE2516AASE-5C-E
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| OCR Text |
...006 preliminary data sheet 256m bits ddr2 sdram ede2504aase (64m words 4 bits) ede2508aase (32m words 8 bits) ede2516aase (16m...p r vdd a12 nc nc nc 9 vddq vddq dq6 dq4 vssq dq1 vddq vssq ldm vddq dq3 ldqs vddq vssq dq0 vddq dq2... |
| Description |
16M X 16 DDR DRAM, 0.6 ns, PBGA84
16M X 16 DDR DRAM, 0.5 ns, PBGA84
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| File Size |
762.02K /
66 Page |
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it Online |
Download Datasheet |
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Elpida Memory, Inc.
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| Part No. |
EDS2516APTA-TI-E EDS2516APTA-75TI-E
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| OCR Text |
...mory, inc. 2005 data sheet 256m bits sdram wtr (wide temperature range) eds2516apta-ti-e (16m words 16 bits) description the eds...p 16m 16 4 133 3 54-pin plastic tsop (ii) note: 100mhz operation at /cas latency = 2. pa... |
| Description |
256M bits SDRAM WTR (Wide Temperature Range)
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| File Size |
708.66K /
52 Page |
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it Online |
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ELPIDA MEMORY INC
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| Part No. |
EDE2516AASE-AE-E EDE2516AASE-DF-E
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| OCR Text |
...006 preliminary data sheet 256m bits ddr2 sdram for hyper dimm ede2508aase-df, -be, -ae (32m words 8 bits) ede2516aase-df, -be, -...p r vdd a12 nc nc nc 9 vddq vddq dq6 dq4 vssq dq1 vddq vssq ldm vddq dq3 ldqs vddq vssq dq0 vddq dq2... |
| Description |
16M X 16 DDR DRAM, 0.5 ns, PBGA84
16M X 16 DDR DRAM, 0.45 ns, PBGA84
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| File Size |
724.77K /
66 Page |
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it Online |
Download Datasheet |
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