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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FCPF20N60 FCP20N60
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| OCR Text |
...eferenced to 25C VGS = 0V, ID = 20a VDS = 600v, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 10A VDS = 40V, ID = 10A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
600 -----... |
| Description |
600v N-Channel MOSFET
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| File Size |
1,243.81K /
10 Page |
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Infineon Technologies
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| Part No. |
H30T90
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| OCR Text |
...ctance g fs v ce =20v, i c =20a - 26 - s dynamic characteristic input capacitance c iss - 2617 - output capacitance c oss - 9...600v, i c =30a, v ge =0/15v, r g =15 , - 1.8 - mj switching characteristic, inductive load,... |
| Description |
IGBT
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| File Size |
285.54K /
12 Page |
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it Online |
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Infineon Technologies
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| Part No. |
H30T100
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| OCR Text |
... 100hz 1khz 10khz 100khz 0a 10a 20a 30a 40a 50a 60a 70a 80a 90a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a ...600v, v ge = 0/15v, r g =26.9 ? , dynamic test circuit in figure e) figure 10. typical switching... |
| Description |
IGBT
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| File Size |
335.78K /
12 Page |
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Micross Components
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| Part No. |
ICE20N170
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| OCR Text |
...s 50 v/ns v ds = 480v, i d = 20a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 180 w t c = 25...600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kin... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
753.80K /
4 Page |
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it Online |
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Micross Components
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| Part No. |
ICE20N170U
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| OCR Text |
...s 50 v/ns v ds = 480v, i d = 20a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 208 w t c = 25...600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kin... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
755.00K /
4 Page |
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it Online |
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Micross Components
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| Part No. |
ICE20N170FP
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| OCR Text |
...s 50 v/ns v ds = 480v, i d = 20a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c...600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kin... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
1,005.27K /
4 Page |
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Mitsubishi Electric Corporation
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| Part No. |
RM20C1A-XXF RM20DA/CA/C1A-XXF RM20CA-XXF RM20DA-XXF
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| OCR Text |
.................................. 20a ? v rrm repetitive peak reverse voltage ...................... 600/800/1000/1200v ? t rr reverse recover...600v* 1 , t j =150 c junction to case case to fin, conductive grease applied min. typ. ... |
| Description |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
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| File Size |
53.32K /
3 Page |
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it Online |
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Price and Availability
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