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Taiyo Yuden (U.S.A.), I...
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Part No. |
NS10145T101MNA
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OCR Text |
29a, 1.25a lifecycle stage mass production standard packaging quantity (minimum) taping 2000pcs(500pcs*4reel) products characteristics table casesize (eia/jis) -/101101 inductance 100h(20%) inductance measuring frequency 100khz rated curren... |
Description |
SMD Power Inductors
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File Size |
161.87K /
2 Page |
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IRF[International Rectifier]
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Part No. |
IRFZ44ESPBF IRFZ44ELPBF
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OCR Text |
...ID = 1mA 0.023 VGS = 10V, ID = 29A 4.0 V VDS = VGS, ID = 250A --- S VDS = 30V, ID = 29A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 60 ID = 29A 13 nC VDS = 48V 23 VGS = 10V, See Fig. 6 and ... |
Description |
HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
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File Size |
227.59K /
10 Page |
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Kersemi Electronic Co., Ltd...
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Part No. |
IRFR3412 IRFR3412TRR
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OCR Text |
... ??? 1.3 v t j = 25 c, i s = 29a, v gs = 0v t rr reverse recovery time ??? 68 100 ns t j = 125 c, i f = 29a q rr reverse recoverycharge ??? 160 240 nc di/dt = 100a/s i rrm reverse recoverycurrent ??? 4.5 6.8 a t on forward tur... |
Description |
Switch Mode Power Supply (SMPS)
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File Size |
3,569.41K /
10 Page |
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it Online |
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Kersemi Electronic Co., Ltd...
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Part No. |
IRFR3412PBF
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OCR Text |
...?? ??? 1.3 v t j = 25c, i s = 29a, v gs = 0v t rr reverse recovery time ??? 68 100 ns t j = 125c, i f = 29a q rr reverse recoverycharge ??? 160 240 nc di/dt = 100a/s i rrm reverse recoverycurrent ??? 4.5 6.8 a t on forward turn-... |
Description |
SMPS MOSFET
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File Size |
3,821.27K /
10 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRFZ44EPBF
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OCR Text |
...ID = 1mA 0.023 VGS = 10V, ID = 29A 4.0 V VDS = VGS, ID = 250A --- S VDS = 30V, ID = 29A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 60 ID = 29A 13 nC VDS = 48V 23 VGS = 10V, See Fig. 6 and 1... |
Description |
HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
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File Size |
143.86K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRFPS29N60L
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OCR Text |
... Power Supplies 175m 600V 130ns 29A * Motor Control applications Features and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower Gate charge results in simpler drive requirements. * Enhanced... |
Description |
SMPS MOSFET
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File Size |
166.79K /
9 Page |
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INTERSIL[Intersil Corporation] Intersil, Corp.
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Part No. |
FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3
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OCR Text |
...)12
VGS = 12V, ID = 46A ID = 29A, VGS = 12V
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge at 12V Threshold Gate Charge Gate Charge Source Gate Charge Drain Plateau Voltage Input Capacitance O... |
Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET
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File Size |
48.34K /
8 Page |
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it Online |
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Price and Availability
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