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  2.2ghz Datasheet PDF File

For 2.2ghz Found Datasheets File :: 1474    Search Time::1.937ms    
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    KTC3620S

KEC(Korea Electronics)
Part No. KTC3620S
OCR Text ... High Gain. L E B L 2 3 1 P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX...2GHz VCE=3V, IC=10mA, f=2GHz VCE=3V, IC=3mA, f=2GHz Note 1) hFE Classification 1(01):75~110, 2(02...
Description EPITAXIAL PLANAR NPN TRANSISTOR

File Size 69.12K  /  7 Page

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    BFR520.215

NXP Semiconductors
Part No. BFR520.215
OCR Text ...r in a sot23 plastic package. 1.2 features and benefits ? high power gain ? low noise figure ? high transition frequency ? gold metallizatio...2ghz - 9 - db bfr520 all information provided in this document is subject to legal disclaimers. ? ...
Description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package

File Size 167.75K  /  14 Page

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    ALM31222-BLKG ALM31222-TR2G

AVAGO TECHNOLOGIES LIMITED
Part No. ALM31222-BLKG ALM31222-TR2G
OCR Text 2.7ghz 1-watt high linearity amplifier data sheet description avago technologies alm-31222 is a high linearity 1 watt pa with good oip3 per...2ghz; 5v, 415ma (typical) 14.9 db gain 47.9 dbm output ip3 31.5 dbm output power at 1db ...
Description 1-Watt High Linearity Amplifier

File Size 196.91K  /  13 Page

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    MCH4013

Sanyo Semicon Device
Part No. MCH4013
OCR Text ... Tstg Conditions Ratings 10 3.5 2.5 15 50 150 --55 to +150 Unit V V V mA mW C C Electrical Characteristics at Ta=25C Parameter Collector...2GHz VCE=1V, IC=2mA, f=2GHz Ratings min typ max 1.0 1.0 70 17 12 22.5 0.06 16 1.5 2.0 150 Unit...
Description NPN Epitaxial Planar Silicon Transistor UHF to X Band Low-Noise Amplifier and OSC Applications

File Size 36.95K  /  3 Page

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    EPA120D

Excelics Semiconductor, Inc.
Part No. EPA120D
OCR Text ... page 1 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised janua...2ghz ? 0.5 x 1200 micron recessed ?mushroom? gate ? si 3 n 4 passivation and plated heat sink ...
Description High Efficiency Heterojunction Power FET

File Size 41.53K  /  2 Page

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    TIM6472-4UL

Toshiba Semiconductor
Part No. TIM6472-4UL
OCR Text .... -1.0 -5 TYP. MAX. 900 -2.5 2.6 4.5 -4.0 6.0 Rth(c-c) Channel to Case u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any inf...
Description MICROWAVE POWER GaAs FET

File Size 43.97K  /  4 Page

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    TIM6472-4SL

Toshiba Semiconductor
Part No. TIM6472-4SL
OCR Text ...V C/W MIN. -1.0 -5 TYP. 900 -2.5 2.6 4.5 MAX. -4.0 6.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= ...2GHz 38 37 36 VDS=10V IDS1.1A 80 Pout 70 60 50 40 30 20 10 Pout(dBm) 35 34 33 ad...
Description MICROWAVE POWER GaAs FET

File Size 147.10K  /  4 Page

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    VENUS-L VENUS-LKG VENUS-QP1S VENUS-QP1T

Mitel Networks, Corp.
http://
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
Part No. VENUS-L VENUS-LKG VENUS-QP1S VENUS-QP1T
OCR Text 2.1 J June 1999 Features q Selectable dual RF input ports for 900MHz AMPS and 1900MHz CDMA bands. q Power Management Control Ordering...2GHZ Figure 2. Block diagram LO 1GHZ VENUS-L Preliminary Information CDMA IF CDMA IFB...
Description CDMA/AMPS Dual Band RF Receiver 码分多址/ AMPS二元双波段射频接收机

File Size 85.69K  /  7 Page

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