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SIEMENS[Siemens Semiconductor Group]
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Part No. |
C67078-S3133-A2 BUZ339
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OCR Text |
...: VGS
1.6
26 A 22
Ptot = 170w
k jg hf i
e
d
VGS [V] a 4.0
b c 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0
a
b
RDS (on)
1.2
ID
20 18
c
d e f g
16 14 12 10 8 6 4 2 0 0
a b
1.0
0.8
c
h i j
0.6
... |
Description |
From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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File Size |
220.03K /
9 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRAUDAMP3
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OCR Text |
...n Board Efficiency 25-35V 120W 170w 4 40 <250mA 14W 94% (Typical) Notes / Conditions IRS20124S gate driver, IRF6645 DirectFET MOSFET Self-oscillating, 2nd order Sigma-Delta modulation, analog input 1kHz 1kHz 1kHz, relative to 4 load No inp... |
Description |
120W x 6 Channel Class D Audio Power Amplifier using IRS20124S and IRF6645
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File Size |
3,314.51K /
40 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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Part No. |
BUZ323
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OCR Text |
...eter: tp = 80 s
34 A 28 Ptot = 170w l
k ih g j f e
VGS [V] a 4.0 b 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS
0.9
a b c
RDS (on) 0.7 0.6 0.5 0.4 0.3 0.2 0.1
a V... |
Description |
SIPMOS Power Transistor
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File Size |
113.31K /
9 Page |
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it Online |
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APEX[Apex Microtechnology]
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Part No. |
MP240
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OCR Text |
...15V6 -VS - 15V6 25A, within SOA 170w +VB to -VB 225C. 150C. -40 to 105C. -40 to 85C. TYP 1 20 MAX 5 50 20 100 0.1 50 +VB - 15 -VB + 15 25 5 5 0 UNITS mV V/C V/V pA pA/V pA G pF V V dB V V RMS V V dB MHz V V V V A V/S S 100 25 V mA mA mA C... |
Description |
POWER OPERATIONAL AMPLIFIER
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File Size |
296.48K /
5 Page |
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it Online |
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NTE[NTE Electronics]
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Part No. |
NTE213
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OCR Text |
.... . . . . . . . . . . . . . . . 170w Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . ... |
Description |
Germanium PNP Transistor High Power, High Gain Amplifier
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File Size |
22.44K /
2 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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Part No. |
APT6017JLL
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OCR Text |
170w
S
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg.... |
Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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File Size |
56.72K /
2 Page |
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it Online |
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