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  16-col Datasheet PDF File

For 16-col Found Datasheets File :: 2747    Search Time::5.468ms    
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    MM1414 MM1414D MM1414C MM1414B MM1414A

Mitsumi Electronics, Corp.
Advanced Analogic Technologies
Mitsumi Electric Co Ltd
Part No. MM1414 MM1414D MM1414C MM1414B MM1414A
OCR Text ...n Assignment 1 2 3 20 19 18 17 16 15 14 13 12 11 4 5 1 2 3 4 5 6 7 8 9 10 TSOP-20A 6 7 8 9 10 OV N.C CS N.C DCHG N.C CDC COL COV GND 11 12 13 14 15 16 17 18 19 20 SEL N.C CON N.C V1 V2 V3 V4 N.C VCC MITSUMI Protection of Lithium Ion ...
Description Protection of Lithium Ion Batteries
Analog IC - Datasheet Reference
From old datasheet system

File Size 240.83K  /  9 Page

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    Elpida Memory, Inc.
Part No. PD488588FF-C80-40-DH1
OCR Text ... 80-ball fbga ( bga ? ) (17.16 10.2) application the pd488588ff is most appropriate for the applications, such as consumer p...col packet interaction ................................................................................
Description 288M bits Direct Rambus DRAM for High Performance Solution

File Size 1,072.63K  /  79 Page

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    Zarlink Semiconductor
Part No. MVTX1100AL
OCR Text ...8 56 54 14 32 30 28 26 24 20 18 16 22 34 52 50 48 46 44 40 38 36 42 m4_link m4_duplex m5_cls m5_link m5_duplex vdd m4_txen m4_txd m4_txclk m...col m8_rxclk vdd m8_rxd[0] m8_rxd[1] m8_rxd[2] m8_rxd[3] vss (core) m8_txclk vdd m8_txen m8_txd[0] m...
Description 8 1-port Home PNA Packet Concentrator

File Size 293.08K  /  39 Page

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    Samsung Electronic
Part No. K4S561633C-RLN
OCR Text ...nized as 4 x 4,196,304 words by 16 bits, fabri- cated with samsung ' s high performance cmos technology. syn- chronous design allows precise...col. address delay t cdl (min) 1 clk 2 last data in to burst stop t bdl (min) 1 clk 2 col. address t...
Description 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP Data Sheet

File Size 674.11K  /  47 Page

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    SIEMENS AG
Part No. HYB3164160T-60 HYB3165160T-60
OCR Text 16-bit organization ? 0 to 70 ?c operating temperature ? fast access and cycle time ras access time: 50 ns (-50 version) 60 ns (-60 version)...col add i/o1- i/o16 standby h h - x h - x x x x x high impedance read:word l l h h l row col data ou...
Description 4M x 16-Bit Dynamic RAM 4M X 16 FAST PAGE DRAM, 60 ns, PDSO54

File Size 377.43K  /  26 Page

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    Electronic Theatre Controls, Inc.
Part No. GLT4160L04SE-60TC GLT4160L04SE-60J3 GLT4160L04S-40J3 GLT4160L04S-40TC GLT4160L04S-60TC GLT4160L04SE-70TC GLT4160L04SE-50TC GLT4160L04SE-40TC GLT4160L04S-70TC GLT4160L04S-50TC GLT4160L04-40J3 GLT4160L04-40TC GLT4160L04-60J3 GLT4160L04-60TC GLT4160L04E-60J3 GLT4160L04E-60TC GLT4160L04S-60J3 GLT4160L04SE-40J3 GLT4160L04E-40TC GLT4160L04-70J3
OCR Text ...random access memory containing 16,777,216 bits organized in a x4 configuration. the glt4160l04 offers page cycle access with extended dat...col data-out early write l l l x row col data-in read write l l h ? l l ? h row col data- out,data-i...
Description 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT 4米4 CMOS动态RAM的扩展数据输

File Size 585.57K  /  22 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM5716C50
OCR Text ...oncurrent rdram description the 16/18/64-megabit concurrent rambus? drams (rdram?) are extremely high-speed cmos drams organized as 2m or 8...col packets with column addresses. this is an rsl signal. a address (busenable) i +3.3 v power suppl...
Description 2M×8 Dynamic RAM(2M×8动态RAM) 200万8动态RAM米8动态内存)

File Size 619.27K  /  45 Page

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    http://
TM Technology, Inc.
Part No. T436416C T436416C-6S T436416C-7S T436416C-7SG T436416C-6SG
OCR Text ...temperature : 0 ~ +70 C 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM GRNERAL DESCRIPTION The T436416C is 67,108,864 bits synch...Col. Buffer C olum n D ecoder Latency & Burst Length LC K E LR A S LC BR LW E LC A S Tim in...
Description 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM 4米16 SDRAM00x 16BitX 4Banks同步DRAM

File Size 650.82K  /  28 Page

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    K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S281632B-NL1H
OCR Text ...nized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Programming Registe...
Description 128Mb SDRAM, 3.3V, LVTTL, 100MHz
2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP

File Size 62.82K  /  8 Page

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