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  1300a Datasheet PDF File

For 1300a Found Datasheets File :: 53    Search Time::1.328ms    
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    IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07

Infineon Technologies AG
Part No. IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07
OCR Text ...0 25 30 -v ds [v] c [pf] 130a 1300a 0 0.5 1 1.5 2 -60 -20 20 60 100 140 180 t j [c] -v gs(th) [v] rev. 1.0 page 6 2008-07-29 ipb80p03p4l-07 ipi80p03p4l-07, ipp80p03p4l-07 13 avalanche energy 14 drain-source breakdown voltag...
Description OptiMOS-P2 Power-Transistor
80 A, 30 V, 0.0069 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB GREEN, PLASTIC, TO-263, 3 PIN
80 A, 30 V, 0.0072 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA GREEN, PLASTIC, TO-262, 3 PIN
80 A, 30 V, 0.0072 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN

File Size 167.15K  /  9 Page

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    IRF[International Rectifier]
Part No. GA500TD60U
OCR Text ...RG2 = 0 -- A/s VCC = 360V di/dt=1300a/s 2 www.irf.com GA500TD60U 250 F o r b o thwave: Square : 200 LOAD CURRENT (A) D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G CE =d60% a s s p e c ifie d V a te riv e Rated ...
Description    HALF-BRIDGE IGBT DUAL INT-A-PAK
600V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package

File Size 234.54K  /  10 Page

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    2MBI650VXA-170E-50

Fuji Electric
Part No. 2MBI650VXA-170E-50
OCR Text ... er volt age: v ce [ v] ic=1300a ic=650a ic=325a 0 1000 2000 3000 4000 5000 6000 7000 8000 gate charge: qg [nc] c olle ct or-em i tt er v olt age: v ce [ 200v/ div ] gat e-em i tt er v olt age : v ge [ 5v/ div ] v ce v ge 2...
Description IGBT MODULE (V series) 1700V / 650A / 2 in one package

File Size 350.90K  /  7 Page

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    DFM400XXM65-F000 DFM400XXM65-F000-15

Dynex Semiconductor
Part No. DFM400XXM65-F000 DFM400XXM65-F000-15
OCR Text ...0a v r = 3600v di f /dt = 1300a/s 700 c i rr peak reverse recovery current 300 a e rec reverse recovery energy 1300 mj t case = 125c unless stated otherwise symbol parameter test conditi...
Description Fast Recovery Dual Diode Module
   Fast Recovery Dual Diode Module

File Size 165.27K  /  6 Page

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    DCR1300L70 DCR1300L75 DCR1300L80 DCR1300L85

Dynex Semiconductor
Part No. DCR1300L70 DCR1300L75 DCR1300L80 DCR1300L85
OCR Text ... parameters v drm 8500v i t(av) 1300a i tsm 17600a dv/dt* 1500v/s di/dt 400a/s * higher dv/dt selections available outline type code: l (see package details for further information) fig. 1 package outline semiconductor dcr1300l85 2/10 ww...
Description Phase Control Thyristor

File Size 193.87K  /  10 Page

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    GA2.0TS60U

International Rectifier
Part No. GA2.0TS60U
OCR Text ...v cc = 360v during t b di/dt = 1300a/s parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 v ge = 0v, i c = 1ma v ce(on) collector-to-emitter voltage 1...
Description HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

File Size 303.24K  /  10 Page

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    GA150TS60U

International Rectifier
Part No. GA150TS60U
OCR Text ... v cc = 360v during t b di/dt =1300a/s parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v ge = 0v, i c = 1ma v ce(on) collector-to-emitter voltage ...
Description 600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 215.94K  /  10 Page

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    NOIV1SN1300A-QDC NOIV1SN1300A-QXC NOIV1SN1300A-XDC NOIV1SN1300A-XXC NOIV2SE1300A-QDC NOIV2SE1300A-XXC NOIV2SE1300A-QXC N

ON Semiconductor
Part No. NOIV1SN1300a-QDC NOIV1SN1300a-QXC NOIV1SN1300a-XDC NOIV1SN1300a-XXC NOIV2SE1300a-QDC NOIV2SE1300a-XXC NOIV2SE1300a-QXC NOIV1SE1300a-QDC NOIV1SE1300a-QXC NOIV1SE1300a-XXC NOIV2SN1300a-XDC NOIV2SN1300a-XXC NOIV2SN1300a-QDC NOIV2SN1300a-QXC
OCR Text ...e left center line 1: noi xxxx 1300a where xxxx denotes lvds (v1) / cmos (v2), mono micro lens (sn) /color micro lens (se) option line 2: -qdc line 3: awlyyww noiv1sn1300a, noiv2sn1300a http://onsemi.com 3 contents features 1 ...........
Description VITA 1300 1.3 Megapixel 150 FPS Global Shutter CMOS Image Sensor

File Size 780.15K  /  76 Page

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    DYNEX SEMICONDUCTOR LTD
Part No. DIM400XSM65-K000
OCR Text ...erse recovery current di f /dt =1300a/us 300 a e rec diode reverse recovery energy 1300 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn-off delay time i c =400a 6.0 us t f fall ti...
Description 400 A, 6300 V, N-CHANNEL IGBT

File Size 138.22K  /  8 Page

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For 1300a Found Datasheets File :: 53    Search Time::1.328ms    
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