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  1 8v 512k x 36 qdr ii pipeline Datasheet PDF File

For 1 8v 512k x 36 qdr ii pipeline Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. 4559 M34559G6-xxxFP
Description 18-Mbit (512K x 36/1M x 18) pipelined SRAM; Architecture: Standard Sync, pipeline SCD; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER 单芯位微机的CMOS

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    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. M38230G4-xxxFP M38230G4-xxxHP M38231G4-xxxHP M38232G4-xxxFP M38232G4-xxxHP M38233G4-xxxFP M38233G4-xxxHP M38234G4-xxxFP M38234G4-xxxHP M38235G4-xxxFP M38230G6-xxxFP M38230G6-xxxHP M38231G6-xxxFP M38231G6-xxxHP M38232G6-xxxFP M38232G6-xxxHP M38233G6-xxxFP M38233G6-xxxHP M38234G6-xxxFP M38234G6-xxxHP M38235G6-xxxFP M38235G6-xxxHP M38236G6-xxxHP M38237G6-xxxFP M38237G6-xxxHP M38238G6-xxxFP M38230G7-xxxFP M38230G7-xxxHP M38231G7-xxxFP M38231G7-xxxHP M38232G7-xxxFP M38232G7-xxxHP M38233G7-xxxFP M38233G7-xxxHP M38234G7-xxxFP M38234G7-xxxHP M38235G7-xxxFP M38235G7-xxxHP M38236G7-xxxFP M38236G7-xxxHP M38237G7-xxxFP M38237G7-xxxHP M38238G7-xxxFP M38238G7-xxxHP M38239G7-xxxFP M38239G7-xxxHP M38230G8-xxxFP M38230G8-xxxHP M38231G8-xxxFP M38231G8-xxxHP M38232G8-xxxFP M38232G8-xxxHP M38233G8-xxxFP M38233G8-xxxHP M38234G8-xxxFP M38234G8-xxxHP M38235G8-xxxFP M38235G8-xxxHP M38236G8-xxxFP M38236G8-xxxHP M38237G8-xxxFP M38237G8-xxxHP M38238G8-xxxFP M38238G8-xxxHP M38230GA-xxxFP M38230GA-xxxHP M38231GA-xxxFP M38231GA-xxxHP M38232GA-xxxFP M38232GA-xxxHP M38233GA-xxxFP M38233GA-xxxHP M38234GA-xxxFP M38234GA-xxxHP M38235GA-xxxFP M38235GA-xxxHP M38236GA-xxxFP M38236GA-xxxHP M38237GA-xxxFP M38237GA-xxxHP
Description 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit qdr(TM)-ii SRAM 4-Word Burst Architecture; Architecture: qdr-ii, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-ii SRAM 2-Word Burst Architecture; Architecture: DDR-ii CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) pipelined SRAM; Architecture: Standard Sync, pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit qdr(TM)-ii SRAM 2-Word Burst Architecture; Architecture: qdr-ii, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit qdr(TM)-ii SRAM 2-Word Burst Architecture; Architecture: qdr-ii, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit qdr(TM)-ii SRAM 2-Word Burst Architecture; Architecture: qdr-ii, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) pipelined Sync SRAM; Architecture: Standard Sync, pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-ii SRAM 2-Word Burst Architecture; Architecture: DDR-ii CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: qdr-ii, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-ii SRAM 2-Word Burst Architecture; Architecture: DDR-ii CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit qdr(TM)-ii SRAM 4-Word Burst Architecture; Architecture: qdr-ii, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) pipelined Sync SRAM; Architecture: Standard Sync, pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit qdr(TM)-ii SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: qdr-ii , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-ii SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-ii CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) pipelined Sync SRAM; Architecture: Standard Sync, pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-ii SRAM 2-Word Burst Architecture; Architecture: DDR-ii CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit qdr(TM)-ii SRAM 4-Word Burst Architecture; Architecture: qdr-ii, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit qdr(TM)-ii SRAM 2-Word Burst Architecture; Architecture: qdr-ii, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit qdr(TM)-ii SRAM 4-Word Burst Architecture; Architecture: qdr-ii, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: qdr-ii, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-ii SRAM 2-Word Burst Architecture; Architecture: DDR-ii CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-ii SRAM 2-Word Burst Architecture; Architecture: DDR-ii CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit qdr(TM)-ii SRAM 2-Word Burst Architecture; Architecture: qdr-ii, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V

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    IDT29FCT520C IDT29FCT520BSOB IDT29FCT520BSO IDT29FCT520APB IDT29FCT520A IDT29FCT520BL IDT29FCT520CSOB IDT29FCT520AD IDT2

IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Part No. IDT29FCT520C IDT29FCT520BSOB IDT29FCT520BSO IDT29FCT520APB IDT29FCT520A IDT29FCT520BL IDT29FCT520CSOB IDT29FCT520AD IDT29FCT520ADB IDT29FCT520AE IDT29FCT520AEB IDT29FCT520AL IDT29FCT520ALB IDT29FCT520AP IDT29FCT520ASO IDT29FCT520ASOB IDT29FCT520B IDT29FCT520BD IDT29FCT520BDB IDT29FCT520BE IDT29FCT520BEB IDT29FCT520BLB IDT29FCT520BP IDT29FCT520BPB IDT29FCT520CD IDT29FCT520CDB IDT29FCT520CE IDT29FCT520CEB IDT29FCT520CL IDT29FCT520CLB IDT29FCT520CP IDT29FCT520CPB IDT29FCT520CSO
Description MULTILEVEL pipeline REGISTER 8-BIT, DSP-pipeline REGISTER, CQCC28
MULTILEVEL pipeline REGISTER 8-BIT, DSP-pipeline REGISTER, CDIP24

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    Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor Corp...
Part No. AS7C33128PFD36A-166TQI AS7C33128PFD32A AS7C33128PFD32A-100TQC AS7C33128PFD32A-100TQI AS7C33128PFD32A-133TQC AS7C33128PFD32A-133TQI AS7C33128PFD32A-150TQC AS7C33128PFD32A-150TQI AS7C33128PFD32A-166TQC AS7C33128PFD32A-166TQI AS7C33128PFD36A AS7C33128PFD36A-100TQC AS7C33128PFD36A-100TQI AS7C33128PFD36A-133TQC AS7C33128PFD36A-133TQI AS7C33128PFD36A-150TQC AS7C33128PFD36A-150TQI AS7C33128PFD36A-166TQC
Description 3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 150MHz
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 133MHz
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 100MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 166MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 150MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 133MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 100MHz
3.3V 128K x 32/36 pipeline burst synchronous SRAM 128K x 32 STANDARD SRAM, 10 ns, PQFP100

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    Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Part No. AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32A-100TQC AS7C3364PFS32A-100TQI AS7C3364PFS32A-133TQC AS7C3364PFS32A-133TQI AS7C3364PFS32A-150TQC AS7C3364PFS32A-150TQI AS7C3364PFS32A-166TQC AS7C3364PFS32A-166TQI AS7C3364PFS36A AS7C3364PFS36A-100TQC AS7C3364PFS36A-100TQI AS7C3364PFS36A-133TQC AS7C3364PFS36A-133TQI AS7C3364PFS36A-150TQC AS7C3364PFS36A-150TQI AS7C3364PFS36A-166TQC
Description 3.3V 64K x 32/36 pipeline burst synchronous SRAM 64K x 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 64K x 32/36 pipeline burst synchronous SRAM 64K x 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K x 32/36 pipeline burst synchronous SRAM 64K x 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K x 36 STANDARD SRAM, 12 ns, PQFP100
3.3V 64K x 32/36 pipeline burst synchronous SRAM 64K x 32 STANDARD SRAM, 12 ns, PQFP100

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    Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor ...
Part No. AS7C33256PFS18A-166TQI AS7C33256PFS16A AS7C33256PFS16A-100TQC AS7C33256PFS16A-100TQI AS7C33256PFS16A-133TQC AS7C33256PFS16A-133TQI AS7C33256PFS16A-150TQC AS7C33256PFS16A-150TQI AS7C33256PFS16A-166TQC AS7C33256PFS16A-166TQI AS7C33256PFS18A AS7C33256PFS18A-100TQC AS7C33256PFS18A-100TQI AS7C33256PFS18A-133TQC AS7C33256PFS18A-133TQI AS7C33256PFS18A-150TQC AS7C33256PFS18A-150TQI AS7C33256PFS18A-166TQC
Description 3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K×18 Ppipeline Burst Synchronous SRAM(3.3V 256K×18流水线脉冲同步静态RAM) 3.3 256K × 18 Ppipeline突发同步SRAM的电压(3.3V 256K × 18流水线脉冲同步静态内存)
3.3V 256K 】 16/18 pipeline burst synchronous SRAM
3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 133MHz
   3.3V 256K × 16/18 pipeline burst synchronous SRAM

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    Vicor, Corp.
Part No. WED2ZL361MV50BC WED2ZL361MV38BC WED2ZL361MV42BC WED2ZL361MV35BC
Description 1M x 36 Synchronous pipeline Burst NBL SRAM(1M x 36,5.0ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,5.0纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
1M x 36 Synchronous pipeline Burst NBL SRAM(1M x 36,3.8ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.8纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
1M x 36 Synchronous pipeline Burst NBL SRAM(1M x 36,4.2ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,4.2纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
1M x 36 Synchronous pipeline Burst NBL SRAM(1M x 36,3.5ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.5纳秒同步脉冲流水线静态随机存储器(无总线等待时间))

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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC CY7C1380C-167AI CY7C1380C-167BGC CY7C1380C-167BZI CY7C1380C-133AC CY7C1380C-225AC CY7C1380C-167BGI CY7C1380C-250AC CY7C1380C-250BZC CY7C1382C-225BZC CY7C1382C-250BZC CY7C1380C-225BZC CY7C1382C-167AC CY7C1382C-167BZI
Description Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) pipelined SRAM 1M x 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) pipelined SRAM 1M x 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) pipelined SRAM 512K x 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) pipelined SRAM 512K x 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) pipelined SRAM 512K x 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) pipelined SRAM 512K x 36 CACHE SRAM, 3.4 ns, PQFP100

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    Alliance Semiconductor, Corp.
Part No. AS7C3256PFD18A-4TQC AS7C3256PFD16A-4TQC AS7C3256PFD18A AS7C3256PFD18A-3.5TQC AS7C3256PFD18A-3.8TQC AS7C3256PFD18A-5TQC AS7C3256PFD16A-5TQC AS7C3256PFD16A AS7C3256PFD16A-3.5TQC AS7C3256PFD16A-3.8TQC
Description 3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz
256K x 18 STANDARD SRAM, 4 ns, PQFP100 14 x 20 MM, TQFP-100
256K x 16 STANDARD SRAM, 4 ns, PQFP100 14 x 20 MM, TQFP-100
3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K x 18 pipeline burst synchronous SRAM, 166 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 100 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 166MHz

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    EUA6210 EUA6210MIR1

寰蜂俊绉???′唤??????
Eutech Microelectronics Inc
德信科技股份有限公司
Part No. EUA6210 EUA6210MIR1
Description 128K x 36, 3.3V, Sync Burst pipeline
Output Capacitor-less 67mW Stereo Headphone Amplifier
128K x 32, 3.3V, Sync Burst pipeline

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