0.8a pdf Datasheet P4 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : ADP221 MMSZ15T1 SI4420 NX5315 NS1N6491 AP2509 AWD637T LTC2607
	Product Description
	Full Text Search

0.8a Datasheet PDF File

For 0.8a Found Datasheets File :: 16725 Search Time::2.36ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Alpha & Omega Semiconductors
Part No.	AOT8N65
OCR Text	...case for 5 seconds 650 i d 5 50.0 208 5.2 8* 5.2* the aot8n65 & aotf8n65 have been fabricated using an advanced high voltage mosfet process...8a,di/dt=100a/ m s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds...
Description	650V, 8A N-Channel MOSFET
File Size	151.23K / 6 Page	View it Online	Download Datasheet

				Savantic, Inc.
Part No.	2SC2788
OCR Text	...eakdown voltage i c =1ma ;i e =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v ce (sat) collector-emitter saturation voltage i c =4a ;i b =0.8a 1.0 v v be ( sat) base-emitter saturation voltage i c ...
Description	Silicon NPN Power Transistors
File Size	139.76K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text	... Max. 30 20 62 52 248 87 61 0.59 -55 to + 175 Units V V A W W mW/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-C...8A --- nC VDS = 15V --- VGS = 4.5V 27 VGS = 0V, VDS = 15V --- VDD = 15V --- ID = 24.8A ns --- RG = ...
Description	30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A) Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A) Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
File Size	141.65K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	... Max. 30 12 62 52 248 87 61 0.58 -55 to + 175 Units V V A W W W/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-Ca...8A --- nC VDS = 15V --- VGS = 4.5V 21 VGS = 0V, ID = 24.8A, VDS = 15V --- VDD = 15V --- ID = 24.8A ...
Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

				Chenmko Enterprise Co. Ltd.
Part No.	CHM4936JPT
OCR Text	...transistor v o l t a g e 3 0 v o l t s c u r r e n t 5.8 ampere a p p l i c a t i o n f e a t u r e * h i g h d e n s i ...8a r ds(on) static drain-source on-resistance m w vgs=10v, id=5.8a switching characteristics q gs...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	185.57K / 2 Page	View it Online	Download Datasheet

				Harris
Part No.	MUR890E RURP890 MUR870E
OCR Text	...20- -20- - 20 - ns r q jc - - 2.0 - - 2.0 - - 2.0 - - 2.0 o c/w e avl see fig. 7 & 8 - - 20 - - 20 - - 20 - - 20 mj definitions v f = instantaneous forward voltage (pw = 300 m s, d = 2%). i r = instantaneous reverse current. t rr = rever...
Description	700V - 1000V Ultrafast Diodes
File Size	39.20K / 3 Page	View it Online	Download Datasheet

				SYNC POWER Crop.
Part No.	SPP2345
OCR Text	...=25 p d 1.25 w t a =70 0.8 operating junction temperature t j 150 storage temperature range t stg -55/150 thermal resi...8a 72 85 v gs =-1.8v,i d =-2.3a 100 110 forward transconductance gfs v ds =-5v,i d =-3.5a 8.5...
Description	P-Channel Enhancement Mode MOSFET
File Size	226.58K / 8 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
Part No.	SCG4153 SCG4153-15
OCR Text	...onische bauelemente scg4153 0.8a , 20v , r ds(on) 310 m ? n-channel enhancement mode mosfet 12-mar-2013 rev. a page 1 of 4 n3 = date code rohs compliant product a suffix of -c specifies ...
Description	N-Channel Enhancement Mode MOSFET
File Size	678.51K / 4 Page	View it Online	Download Datasheet

				Rohm Co., Ltd.
Part No.	RGT30NS65D
OCR Text	...th) v ce = 5v, i c = 10.0ma 5.0 6.0 7.0 v gate - emitter leakage current i ges v ge = ? 30v, v ce = 0v - - - v collector cut - off curr...8a i c = 15a v ge = 15v 6/11 2014.05 - rev.a www.rohm.com ? 2014 rohm co., ltd. all righ...
Description	650V 15A Field Stop Trench IGBT 650V 15A Field Stop Trench IGBT
File Size	704.08K / 12 Page	View it Online	Download Datasheet

For 0.8a Found Datasheets File :: 16725 Search Time::2.36ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |