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  wcdma Datasheet PDF File

For wcdma Found Datasheets File :: 1691    Search Time::1.203ms    
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    PTF210301 PTF210301A PTF210301E

INFINEON[Infineon Technologies AG]
Part No. PTF210301 PTF210301A PTF210301E
OCR Text ...atched GOLDMOS FET intended for wcdma applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features * * Broadband internal matching Typical two-carrier wcdma performance - Averag...
Description LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 30 W 2110-2170 MHz

File Size 333.91K  /  8 Page

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    PTF210451 PTF210451E

INFINEON[Infineon Technologies AG]
Part No. PTF210451 PTF210451E
OCR Text ...atched GOLDMOS FET intended for wcdma applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features * * Internal matching for wideband performance Typical two-carrier wcdma perfo...
Description LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 45 W 2110-2170 MHz

File Size 402.88K  /  8 Page

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    PTF210901 PTF210901E

INFINEON[Infineon Technologies AG]
Part No. PTF210901 PTF210901E
OCR Text ...d 90 W GOLDMOS FET intended for wcdma applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two-Carrier wcdma Drive-Up VDD = 28 V, IDQ = 1050 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP ...
Description LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz

File Size 262.17K  /  8 Page

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    FAR-D5GD-942M50-D1DF

Fujitsu Component Limited.
Part No. FAR-D5GD-942M50-D1DF
OCR Text wcdma Band VIII Duplexer (Rx balanced) FAR-D5GD-942M50-D1DF FUJITSU MEDIA DEVICES LIMITED DATE Version 1.0gg July 30, 2008 Table 1. Electrical Specification Condition (MHz) 880.4~914.6 880.4~914.6 880.4~914.6 880.4~914.6 927.4~957.6...
Description wcdma Band VIII Duplexer (Rx balanced)

File Size 155.85K  /  10 Page

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    PTFA212401E PTFA212401F

Infineon Technologies AG
Part No. PTFA212401E PTFA212401F
OCR Text ...ned for single- and two-carrier wcdma power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advan...
Description Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ?2170 MHz

File Size 485.68K  /  11 Page

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    ANADIGICS INC
Part No. ARM45P9
OCR Text wcdma, cdma multimode pam data sheet- rev 2.0 m45 package 10 pin 3 mm x 3 mm x 1 mm surface mount module figure 1: block diagram features ? multimode (hspa, evdo compliant) ? 4th generation help tm technology ? high effciency (...
Description TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PDSO10

File Size 358.67K  /  9 Page

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    ANADIGICS INC
Part No. RM45P9
OCR Text wcdma/cdma multi-mode pam data sheet - rev 2.2 m45 package 10 pin 3 mm x 3 mm x 1 mm surface mount module figure 1: block diagram features ? mixed-mode hspa, evdo, lte compliant ? 4th generation help tm technology ? high effci...
Description 1850 MHz - 1915 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER

File Size 434.78K  /  11 Page

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    PTFA210601E PTFA210601F

Infineon Technologies AG
Part No. PTFA210601E PTFA210601F
OCR Text ...ned for single- and two-carrier wcdma power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advan...
Description Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz

File Size 231.55K  /  10 Page

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    PTFA210701E PTFA210701F

Infineon Technologies AG
Part No. PTFA210701E PTFA210701F
OCR Text ...ed for single- and dual-carrier wcdma power amplifier applications in the 2110 MHz to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's a...
Description Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz

File Size 378.40K  /  10 Page

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    PTFA260851E PTFA260851F

Infineon Technologies AG
Part No. PTFA260851E PTFA260851F
OCR Text ....68 GHz, PAR = 7 dB -30 -40 wcdma 3GPP Single-carrier Performance, various voltages IDQ = 900 mA, = 2.68 GHz, PAR = 8 dB 40 VDD = 26 V VDD = 28 V VDD = 32 V 16 Drain Efficiency (%) ACPR (dBc) Alt2 2.5 MHz -50 -60 -70 ...
Description Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 鈥?2700 MHz

File Size 389.99K  /  11 Page

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For wcdma Found Datasheets File :: 1691    Search Time::1.203ms    
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