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For vec Found Datasheets File :: 1730    Search Time::2.688ms    
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    CM200RX-12A

Mitsubishi Electric Semiconductor
Part No. CM200RX-12A
OCR Text .... 6) Tj = 25C Tj = 125C Chip vec(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R RGint RG IE = 200A, VGE = 0V Thermal resistance per IGBT (Note. 1) (Junction to case) per free wheeling diode Internal gate resistance TC = 25C, pe...
Description IGBT MODULES HIGH POWER SWITCHING USE

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    CM100RX-12A

Mitsubishi Electric Semiconductor
Part No. CM100RX-12A
OCR Text .... 6) Tj = 25C Tj = 125C Chip vec(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R RGint RG IE = 100A, VGE = 0V Thermal resistance per IGBT (Note. 1) (Junction to case) per free wheeling diode Internal gate resistance TC = 25C, pe...
Description IGBT MODULES HIGH POWER SWITCHING USE

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    Semikron
Part No. SKIIP192GDL170-475CTV
OCR Text ...ction 1) Inverse Diode VF = vec IF= 140A; VF= vec IF= 140A; Eon + Eoff IF= 150A; VTO T j = 125 C rT T j = 125 C T j = 125 C T j = 25 C T j = 125 C 2) 3) 4) Thermal Characteristics 10) Rthjs per IGBT 10) Rthjs per Diode 6,10)...
Description SKiiPPACK - SK integrated intelligent Power PACK 3-phase bridge with brake chopper

File Size 29.42K  /  2 Page

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    CM900DU-24NF CM900DU-24NF09

Mitsubishi Electric Semiconductor
Part No. CM900DU-24NF CM900DU-24NF09
OCR Text ...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) (chip) ns ns C V IE = 900A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied (1/2 module) Case temperature measured point is just under ...
Description IGBT MODULES HIGH POWER SWITCHING USE

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    CM400DY-50H

Mitsubishi Electric Semiconductor
Part No. CM400DY-50H
OCR Text ... Cres QG td (on) tr td (off) tf vec (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. Parameter Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation vol...
Description HIGH POWER SWITCHING USE INSULATED TYPE
400 A, 2500 V, N-CHANNEL IGBT

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    CM1400DU-24NF CM1400DU-24NF09

Mitsubishi Electric Semiconductor
Part No. CM1400DU-24NF CM1400DU-24NF09
OCR Text ...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) (chip) ns ns C V IE = 1400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied (1/2 module) Case temperature measured point is just under...
Description IGBT MODULES HIGH POWER SWITCHING USE

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    CM400DY-24NF CM400DY-24NF09

Mitsubishi Electric Semiconductor
Part No. CM400DY-24NF CM400DY-24NF09
OCR Text ...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capa...
Description IGBT MODULES HIGH POWER SWITCHING USE

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    CM150RX-12A CM150RX-12A12

Mitsubishi Electric Semiconductor
Part No. CM150RX-12A CM150RX-12A12
OCR Text .... 6) Tj = 25C Tj = 125C Chip vec(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R RGint RG IE = 150A, VGE = 0V Thermal resistance per IGBT (Note. 1) (Junction to case) per free wheeling diode Internal gate resistance TC = 25C, pe...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 222.73K  /  8 Page

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    CM75DY-34A09

Mitsubishi Electric Semiconductor
Part No. CM75DY-34A09
OCR Text ...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 7.5mA, VCE = 10V VGE = VGES, VCE = 0V IC = 75A, VGE = 15V VCE = 10V...
Description IGBT MODULES HIGH POWER SWITCHING USE

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    CM150DY-34A09

Mitsubishi Electric Semiconductor
Part No. CM150DY-34A09
OCR Text ...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V VGE = VGES, VCE = 0V IC = 150A, VGE = 15V VCE = 10V...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 119.09K  /  5 Page

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