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  tunnel Datasheet PDF File

For tunnel Found Datasheets File :: 552    Search Time::1.75ms    
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    MX29F800T MX29F800TMC-12 MX29F800TMC-70 MX29F800TMC-90 MX29F800TMI-12 MX29F800TMI-90 MX29F800TTC-12 MX29F800TTC-70 MX29F

MCNIX[Macronix International]
Part No. MX29F800T MX29F800TMC-12 MX29F800TMC-70 MX29F800TMC-90 MX29F800TMI-12 MX29F800TMI-90 MX29F800TTC-12 MX29F800TTC-70 MX29F800TTC-90 MX29F800TTI-12 MX29F800TTI-90 MX29F800BTC-70 MX29F800BTC-90 29F800 MX29F800B MX29F800BMC-12 MX29F800BMC-70 MX29F800BMC-90 MX29F800BTA-12 MX29F800BTA-90 MX29F800BTC-12 MX29F800TTA-12 MX29F800TTA-90
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29F800T/B uses a 5.0V10% VCC supply to perform the High Reliability Erase and auto Pr...
Description 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY

File Size 691.27K  /  42 Page

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    MX29L1611G MX29L1611GPC-10 MX29L1611GPC-12 MX29L1611GPC-90 MX29L1611PC-10 MX29L1611PC-12 MX29L1611PC-90

MCNIX[Macronix International]
Part No. MX29L1611G MX29L1611GPC-10 MX29L1611GPC-12 MX29L1611GPC-90 MX29L1611PC-10 MX29L1611PC-12 MX29L1611PC-90
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29L1611G uses a 11V Vpp supply to perform the Auto Erase and Auto Program algorit...
Description 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM

File Size 377.97K  /  34 Page

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    MX29L1611 MX29L1611MC-10 MX29L1611MC-12 MX29L1611MC-75 MX29L1611MC-90 MX29L1611TC-10 MX29L1611TC-12 MX29L1611TC-75 MX29L

MCNIX[Macronix International]
Part No. MX29L1611 MX29L1611MC-10 MX29L1611MC-12 MX29L1611MC-75 MX29L1611MC-90 MX29L1611TC-10 MX29L1611TC-12 MX29L1611TC-75 MX29L1611TC-90
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29L1611 uses a 2.7V~3.6V VCC supply to perform the Auto Erase and Auto Program al...
Description 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM

File Size 657.29K  /  39 Page

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    MX29LV160AT MX29LV160T MX29LV160AB MX29LV160ATTC-70 MX29LV160 MX29LV160BTC-90 MX29LV160ABTC-70 MX29LV160ABTC-70G MX29LV1

MCNIX[Macronix International]
Part No. MX29LV160AT MX29LV160T MX29LV160AB MX29LV160ATTC-70 MX29LV160 MX29LV160BTC-90 MX29LV160ABTC-70 MX29LV160ABTC-70G MX29LV160ABTC-90 MX29LV160ABTC-90G MX29LV160TTC-90 MX29LV160BTC-70 MX29LV160ATTC-90 MX29LV160ATTC-90G MX29LV160BMC-90 MX29LV160TTC-70 MX29LV160TMC-90 MX29LV160ATXBC-70 MX29LV160ATXBC-70G MX29LV160ATXBC-90 MX29LV160ATXBC-90G MX29LV160ATXBI-70 MX29LV160ATXBI-70G MX29LV160ATXBI-90 MX29LV160ABTI-70 MX29LV160ABTI-70G MX29LV160ATTI-70 MX29LV160ATTI-70G MX29LV160ATTI-90 MX29LV160ATTI-90G MX29LV160ABTI-90 MX29LV160ABTI-90G MX29LV160TTI-70
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29LV160T/B & MX29LV160AT/AB uses a 2.7V~3.6V VCC supply to perform the High Reliabili...
Description 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

File Size 1,355.59K  /  66 Page

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    F28F010-120 F28F010-150 N28F010-120 N28F010-150 P28F010-120 P28F010-150 F28F010-90 F28F010-65 E28F010-65 P28F010-90 28F0

INTEL[Intel Corporation]
Part No. F28F010-120 F28F010-150 N28F010-120 N28F010-150 P28F010-120 P28F010-150 F28F010-90 F28F010-65 E28F010-65 P28F010-90 28F010 E28F010-120 E28F010-150 E28F010-90 N28F010-65 N28F010-90 P28F010-65
OCR Text ...signed into Intel's ETOX (EPROM tunnel Oxide) process technology Advanced oxide processing an optimized tunneling structure and lower electric field combine to extend reliable cycling beyond that of traditional EEPROMs With the 12 0V VPP su...
Description 1024K (128K x 8) CMOS FLASH MEMORY

File Size 395.74K  /  30 Page

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    MX26L6420 MX26L6420MC-12 MX26L6420MC-90 MX26L6420MI-12 MX26L6420MI-90 MX26L6420TC-12 MX26L6420TC-90 MX26L6420TI-12 MX26L

MCNIX[Macronix International]
Part No. MX26L6420 MX26L6420MC-12 MX26L6420MC-90 MX26L6420MI-12 MX26L6420MI-90 MX26L6420TC-12 MX26L6420TC-90 MX26L6420TI-12 MX26L6420TI-90 MX26L6420XAC-12 MX26L6420XAC-90 MX26L6420XAI-12 MX26L6420XAI-90 MX26L6420XBC-12 MX26L6420XBC-90 MX26L6420XBI-12 MX26L6420XBI-90
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX26L6420 uses a 2.7V to 3.6V VCC supply to perform the High Reliability Erase and ...
Description 64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM

File Size 1,251.31K  /  39 Page

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    Macronix
Part No. MX29LV160BBTC
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29LV160BT/BB uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and au...
Description Flash Memory

File Size 797.73K  /  60 Page

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    MX29LV400B MX29LV400TTI-70 MX29LV400TTC-70 MX29LV400T MX29LV400BTC-70 MX29LV400TTC-90 MX29LV400BTI-70 MX29LV400BTI-90 MX

MCNIX[Macronix International]
Part No. MX29LV400B MX29LV400TTI-70 MX29LV400TTC-70 MX29LV400T MX29LV400BTC-70 MX29LV400TTC-90 MX29LV400BTI-70 MX29LV400BTI-90 MX29LV400BTC-90 MX29LV400TXEI-90 MX29LV400BMC-55R MX29LV400BMC-70 MX29LV400BMC-90 MX29LV400BMI-70 MX29LV400BMI-90 MX29LV400BTC-55R MX29LV400BXBC-70 MX29LV400BXBC-90 MX29LV400BXBI-70 MX29LV400BXBI-90 MX29LV400BXEC-55R MX29LV400BXEC-70 MX29LV400BXEC-90 MX29LV400BXEI-70 MX29LV400BXEI-90 MX29LV400TMC-55R MX29LV400TMC-70 MX29LV400TMC-90 MX29LV400TMI-70 MX29LV400TMI-90 MX29LV400TTC-55R MX29LV400TTI-90 MX29LV400TXBC-55R MX29LV400TXBC-70 MX29LV400TXBC-90 MX29LV400TXBI-70 MX29LV400TXBI-90 MX29LV400TXEC-55R MX29LV400TXEC-70 MX29LV400TXEC-90 MX29LV400TXEI-70
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29LV400T/B uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and auto...
Description 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

File Size 1,215.99K  /  59 Page

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    MXIC
Part No. MX29LV400
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29LV400T/B uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and auto...
Description 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

File Size 1,139.63K  /  60 Page

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    MX29LV800T MX29LV800B MX29LV800TTC-90 MX29LV800TTC-70R MX29LV800TTC-70 MX29LV800BMC-70 MX29LV800BTC-70 MX29LV800BTC-70R

N.A.
MCNIX[Macronix International]
Part No. MX29LV800T MX29LV800B MX29LV800TTC-90 MX29LV800TTC-70R MX29LV800TTC-70 MX29LV800BMC-70 MX29LV800BTC-70 MX29LV800BTC-70R MX29LV800BTC-90 MX29LV800BXEI-90 MX29LV800BMC-90 MX29LV800BMI-70 MX29LV800BMI-90 MX29LV800BTI-70 MX29LV800BTI-70R MX29LV800BTI-90 MX29LV800BXBC-70 MX29LV800BXBC-90 MX29LV800BXBI-70 MX29LV800BXBI-90 MX29LV800BXEC-90 MX29LV800BXEI-70 MX29LV800TXEC-70 MX29LV800BXEC-70 MX29LV800TXEI-70 MX29LV800TMC-70 MX29LV800TMI-70 MX29LV800TXBI-70 MX29LV800TTI-70 MX29LV800TMC-90
OCR Text ...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29LV800T/B uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and auto...
Description 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

File Size 1,243.15K  /  60 Page

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For tunnel Found Datasheets File :: 552    Search Time::1.75ms    
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