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MOTOROLA[Motorola, Inc] ON Semi
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Part No. |
MTW14N50E_D ON2679 MTW14N50E
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OCR Text |
...M Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is des...247AE
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-Source Voltage Drain-Gate V... |
Description |
TMOS POWER FET 14 AMPERES 500 VOLTS RDS(on) = 0.40 OHM From old datasheet system
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File Size |
205.45K /
8 Page |
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it Online |
Download Datasheet |
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ON Semi
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Part No. |
MTW8N60E_D ON2705
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OCR Text |
...M Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This high voltage MOSFET uses a...247AE
Value 600 600 20 40 8.0 6.4 24 180 1.43 - 55 to 150 864 0.70 40 260
Unit Vdc Vdc Vdc V... |
Description |
TMOS POWER FET 8.0 AMPERES 600 VOLTS From old datasheet system
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File Size |
225.21K /
8 Page |
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it Online |
Download Datasheet |
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ON Semi
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Part No. |
MTW10N100E_D ON2676
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OCR Text |
...M Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This high voltage MOSFET uses a...247AE
Value 1000 1000 20 40 10 6.2 30 250 2.0 - 55 to 150 500 0.50 40 260
Unit Vdc Vdc Vdc V... |
Description |
TMOS POWER FET 10 AMPERES 1000 VOLTS From old datasheet system
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File Size |
164.49K /
8 Page |
View
it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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Part No. |
MJW2119205 MJW21192G MJW21191 MJW21191G MJW21192
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OCR Text |
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DC Current Gain Specified up to 8.0 A at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms to-247ae Package Pb-Free Packages are Available*
http://onsemi.com
MAXIMUM RATINGS
Rating Collector-Emitter Vo... |
Description |
8.0 A POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W
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File Size |
70.01K /
6 Page |
View
it Online |
Download Datasheet |
For
to-247ae Found Datasheets File :: 69 Search Time::1.719ms Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | |
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