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Analog Devices, Inc.
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Part No. |
BD828-10 BD826-6 BD826-16 BD830-10
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Description |
SCR Thyristor; SCR Type:Sensitive Gate; Peak repetitive Off-state voltage, Vdrm:400V; On-state RMS Current, IT(rms):10A; Peak Non repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA TRANSIstOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-202 TRANSIstOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202 SCR Thyristor; SCR Type:standard Gate; Peak repetitive Off-state voltage, Vdrm:400V; On-state RMS Current, IT(rms):25A; Peak Non repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1.5AI(丙)|02
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File Size |
203.12K /
5 Page |
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Motorola
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Part No. |
2N6072 2N6072A 2N6072B 2N6074 2N6074A 2N6074B 2N6075
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Description |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.
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File Size |
217.63K /
5 Page |
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NTE Electronics, Inc. NTE[NTE Electronics]
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Part No. |
NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NTE6004 NTE6002 NTE6003 NTE5988 NTE5990
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Description |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
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File Size |
25.97K /
3 Page |
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![A29001 A290011T-55 A290011T-70 A290011TL-70 A290011TV-70 A290011UL-90 A290011UV-70 A290011UV-90 A29001TL-55 A29001U-90 A](Maker_logo/amic_technology.GIF)
AMIC Technology Corporation AMIC Technology, Corp.
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Part No. |
A29001 A290011T-55 A290011T-70 A290011TL-70 A290011TV-70 A290011UL-90 A290011UV-70 A290011UV-90 A29001TL-55 A29001U-90 A29001UL-55 A29001UV-70 A29001UV-90 A290011T-90 A290011TL-55 A290011TL-90 A290011U-55 A290011U-70 A290011U-90 A29001T-70 A29001T-90 A29001TV-55 A29001TV-70 A29001TV-90 A29001U-55 A290011TV-55 A290011TV-90 A290011UL-55 A290011UL-70 A290011UV-55 A29001T-55 A29001TL-90 A29001U-70 A29001UL-70 A29001UL-90 A29001UV-55 A29001TL-70
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Description |
128K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory 5015 RR 4#12 SKT RECPT 5015 RR 4#12 PIN RECPT SCR Thyristor; Thyristor Type:standard Gate; Peak repetitive Off-state voltage, Vdrm:800V; On state RMS Current, IT(rms):25A; Peak Non repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes SCR Thyristor; Thyristor Type:standard Gate; Peak repetitive Off-state voltage, Vdrm:400V; On state RMS Current, IT(rms):16A; Peak Non repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes SCR Thyristor; Thyristor Type:standard Gate; Peak repetitive Off-state voltage, Vdrm:400V; On state RMS Current, IT(rms):25A; Peak Non repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes SCR Thyristor; Thyristor Type:standard Gate; Peak repetitive Off-state voltage, Vdrm:600V; On-state RMS Current, IT(rms):16A; Peak Non repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes SCR Thyristor; Thyristor Type:standard Gate; Peak repetitive Off-state voltage, Vdrm:600V; On state RMS Current, IT(rms):25A; Peak Non repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Triac; Thyristor Type:Snubberless; Peak repetitive Off-state voltage, Vdrm:600V; On state RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes Triac; Thyristor Type:Snubberless; Peak repetitive Off-state voltage, Vdrm:400V; On state RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes 128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K的8位CMOS 5.0伏只,引导扇区闪
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File Size |
316.86K /
32 Page |
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Analog Devices, Inc. HIROSE ELECTRIC Co., Ltd.
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Part No. |
BD825-16 BD827-10 BD827-6 BD829-6
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Description |
SCR Thyristor; SCR Type:standard Gate; Peak repetitive Off-state voltage, Vdrm:400V; On-state RMS Current, IT(rms):12A; Peak Non repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA SCR Thyristor; SCR Type:standard Gate; Peak repetitive Off-state voltage, Vdrm:400V; On-state RMS Current, IT(rms):65A; Peak Non repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA TRANSIstOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1.5AI(丙)|02 TRANSIstOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一(c)|202
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File Size |
205.03K /
5 Page |
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Price and Availability
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