s-igbt pdf Datasheet P3 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : MO456C 78L18 2SD1606 81200 HD7485P 15T120 ST72324B FCT16
	Product Description
	Full Text Search

s-igbt Datasheet PDF File

For s-igbt Found Datasheets File :: 10442 Search Time::1.64ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Mitsubishi Electric Semiconductor
Part No.	PS219B3-S
OCR Text	s/-as/-cs ps219b3-st/-ast/-cst transfer molding type insulated type outline main function and ratings ? 3 phase dc/ac inverter ? 600v / 10a (cstbt) ? n-side igbt open emitter ? built-in bootstrap diodes with current l...
Description	Dual-In-Line Package Intelligent Power Module
File Size	538.98K / 13 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4BC15UD-S
OCR Text	s irg4bc15ud-l insulated gate bipolar transistor with ultrafast soft recovery diode features e g n-channel c v ces = 600v v ce(on) typ. = ...igbt benefits www.irf.com 1 ? ultrafast: optimized for high frequencies from10 to 30 khz in hard ...
Description	(IRG4BC15UD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
File Size	236.83K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRG4BC20FD-S IRG4BC20FD-STRL
OCR Text	S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Fast: Optimized for medium operating frequencies ( 1-5 ...IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * IGBT c...
Description	600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) 绝缘栅双极型晶体管，超快软恢复二极管VCES和\u003d 600V电压的Vce（on）典\u003d 1.66V，@和VGE \u003d 15V的，集成电路\u003d 9.0,9.0 CAP 0.01UF 25V 10% X7R SMD-0508 TR-7 PLATED-NI/SN 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.66V，@和VGE \u003d 15V的，集成电路\u003d 9.0,9.0
File Size	220.13K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-STRR
OCR Text	S INSULATED GATE BIPOLAR TRANSISTOR Features * Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) * Generation 4 IGBT design provides tight parameter distribution and high efficiency C Standard ...
Description	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 18A I(C) \| TO-263AB 晶体管\| IGBT的\|正陈\| 600V的五（巴西）国际消费电子展\| 18A条一（c）\|63AB INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条） INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A) 600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
File Size	150.68K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4BC30W-S IRG4BC30WS
OCR Text	S INSULATED GATE BIPOLAR TRANSISTOR Features * Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applicat...IGBT conduction losses * Latest-generation IGBT design and construction offers tighter parameters di...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)
File Size	174.32K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4BC30K-S IRG4BC30KS IRG4BC30K-STRR
OCR Text	S INSULATED GATE BIPOLAR TRANSISTOR Features * High short circuit rating optimized for motor control, tsc =10s, @360V VCE (start), TJ = 1...IGBT VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Benefits * As ...
Description	600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
File Size	159.80K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGBC30K-S
OCR Text	S INSULATED GATE BIPOLAR TRANSISTOR Features * Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" l...IGBT VCES = 600V VCE(sat) 3.8V @VGE = 15V, I C = 14A n-channel Description Insulated Gate ...
Description	Aluminum Polymer SMT Capacitor; Capacitance: 150uF; Voltage: 4V; Case Size: 6.3x6 mm; Packaging: Tape & Reel INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
File Size	212.54K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGBC30M-S
OCR Text	S INSULATED GATE BIPOLAR TRANSISTOR Features * Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" l...IGBT VCES = 600V VCE(sat) 2.9V @VGE = 15V, I C = 16A n-channel Description Insulated Gate ...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)
File Size	213.62K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGBC20K-S
OCR Text	S INSULATED GATE BIPOLAR TRANSISTOR Features * Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" l...IGBT VCES = 600V VCE(sat) 3.5V @VGE = 15V, I C = 6.0A n-channel Description Insulated Gate...
Description	Aluminum Screw Terminal Permissable Abnormal Voltage Capacitor; Capacitance: 8200uF; Voltage: 400V; Case Size: 76.2x170 mm; Packaging: Bulk INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A)
File Size	220.79K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGBC40K-S
OCR Text	s short circuit rated ultrafast fast igbt insulated gate bipolar transistor features ? short circuit rated - 10s @ 125c, v ge = 15v ? switching-loss rating includes all "tail" losses ? optimized for high operating frequency (over 5khz) ...
Description	Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体
File Size	112.52K / 7 Page	View it Online	Download Datasheet

For s-igbt Found Datasheets File :: 10442 Search Time::1.64ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |