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ONSEMI[ON Semiconductor]
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| Part No. |
MGP20N14CL_D ON1860 MGP20N14CL
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| OCR Text |
... V, IC = 20 A, V, A, VGE = 5 V, RG = 9.1 W) td(on) tr td(off) tf QT Qge Qgc -- -- -- -- -- -- -- TBD TBD TBD TBD 14 3.0 6.0 TBD TBD TBD TBD ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
4
MGP20N14CL/D Motorola ... |
| Description |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
From old datasheet system
20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V ce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED)
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| File Size |
71.74K /
4 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP20N35CL_D ON1862 MGP20N35CL
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| OCR Text |
...0 V, IC = 20 A, , , L = 200 mH, RG = 1 KW) ( (VCC = 14 V, IC = 20 A, , , L = 200 mH, RG = 1 KW) (VCC = 280 V, IC = 20 A, V A VGE = 5 V) Qg Q...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola TMOS Power MOSFET Tra... |
| Description |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
From old datasheet system
20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V CE(on) = 1.8 VOLTS 350 VOLTS (CLAMPED)
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| File Size |
116.07K /
5 Page |
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ON Semi
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| Part No. |
MHPM7A10E60DC3_D ON1946
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| OCR Text |
...130LT3 MC33153 MBRS130LT3 120 W RG(on) 20 W RG(off) MBRS130LT3
-20
-10
0
10
20
30
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS)
...141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488
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Motorola MHPM7A10E... |
| Description |
10 AMP, 600 VOLT HYBRID POWER MODuLE
From old datasheet system
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| File Size |
158.63K /
6 Page |
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it Online |
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ON Semi
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| Part No. |
MHPM7A10S120DC3_D ON1947
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| OCR Text |
... 125C
+15 V MBRS130LT3 220 W RG(on) 20 W RG(off) MBRS130LT3 MBRS130LT3
MC33153
Figure 5. Recommended Gate Drive Circuit
Motorola...141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488
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MHPM7A10S120DC3/D ... |
| Description |
10 AMP, 1200 VOLT HYBRID POWER MODuLE
From old datasheet system
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| File Size |
153.13K /
6 Page |
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it Online |
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ON Semi
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| Part No. |
MGP15N40CL_D ON1855
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| OCR Text |
...V 400 VOLTS CLAMPED
C
G G RG RGE C E
CASE 221A-09 STYLE 9 TO-220AB E
MAXIMuM RATINGS (TJ = 25C unless otherwise noted)
Rating C...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
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MGP15N40CL/D Motorola ... |
| Description |
15 AMPERES N-CHANNEL IGBT V CE(on) = 1.8 V 380 VOLTS CLAMPED
From old datasheet system
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| File Size |
130.90K /
6 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP14N60E_D ON1853 MGP14N60E ON1852
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
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| Description |
IGBT IN TO-220 14 A @ 90 18 A @ 25 600 VOLTS
From old datasheet system
SHORT CIRCuIT RATED LOW ON-VOLTAGE
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| File Size |
117.90K /
5 Page |
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it Online |
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ON Semi
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| Part No. |
MAC16D_D ON0348
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| OCR Text |
... TM 1000
0
10
100 1000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
10000
1
10
20 30 40 50 60 70 80 90 100 (di/dt)c, R...141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488
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Motorola Thyristor... |
| Description |
15 AMPERES RMS 400 thru 800 VOLTS
From old datasheet system
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| File Size |
128.22K /
8 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP15N60u_D ON1858 MGP15N60u ON1857
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| OCR Text |
... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vdc, IC = 8 0 Ad Vd 8.0 Adc, VGE = 15 Vd...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
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| Description |
IGBT IN TO-220 15 A @ 90 26 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
116.67K /
5 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP7N60E_D ON1878 MGP7N60E ON1875
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT Thermal Resistance -- Junction to Ambient Maximum Le...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
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| Description |
IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
114.34K /
5 Page |
View
it Online |
Download Datasheet |
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