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    Xilinx
Part No. XC4000XLA-SERIES XC4000XV-SERIES XC40110XV-08HQ240C XC40110XV-09HQ240C XC40110XV-09HQ240I XC4036XLA-08HQ160C XC4036XLA-08HQ240C XC4044XLA-08HQ240C XC4044XLA-08HQ240I XC4028XLA-08HQ160I XC4028XLA-08HQ208C XC4044XLA-08HQ208C XC4028XLA-08HQ240C XC4044XLA-08HQ304C XC4036XLA-08HQ160I XC4036XLA-08HQ208C XC4036XLA-08HQ240I XC40150XV-09PG559C
OCR Text ... found in Table 2. The K-Factor predicts device current for typical user designs and is based on filling the FPGA with active 16-Bit counters and measuring the device current at 1 MHz. This technique is described in XBRF14 "A Simple Method ...
Description Field Programmable Gate Arrays
Field programmable gate arrays. VCCINT = 2.3V to 2.7V and VCCIO = 3.3 to 3.6V .
Field programmable gate arrays. Vcc = 3.0V to 3.6V.

File Size 134.25K  /  14 Page

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    Atmel
Part No. ATL35
OCR Text ... that the simulation accurately predicts the performance of the finished product. Table 4. Cell Index Cell Name ADD3X AND2 AND2H AND3 AND3H AND4 AND4H AND5 AOI22 AOI222 AOI2223 AOI2223H AOI222H AOI22H AOI23 BUF1 BUF2 BUF2T BUF2Z BUF3 BU...
Description The ATL35 series ASIC family is fabricated on a 0.35 micron CMOS process with up to four levels of metal. This family features arrays with up to 2.7 million routable gates and 976 pins. The high density and high pin count capabilities of t

File Size 268.46K  /  21 Page

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    Atmel
Part No. ATL60
OCR Text ... that the simulation accurately predicts the performance of the finished product. Table 3. Cell Index Signal Name ADD3X AND2 AND2H AND3 AND3H AND4 AND4H AND5 AOI22 AOI22H AOI222 AOI222H AOI2223 AOI2223H AOI23 BUF1 BUF2 BUF2T BUF2Z BUF3 ...
Description The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools.

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    SGS Thomson Microelectronics
Part No. AN1059
OCR Text ... cycle as well, which eqn. (5') predicts to be unity when q = 0, that is at the zero-crossings of the mains voltage. in reality, a number of parasitic effects cause t on and t off not to follow the ideal relationships (2) and (3). the effec...
Description DESIGN EQUATIONS OF HIGH-POWER-FACTOR FLYBACK CONVERTERS BASED ON THE L6561

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