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For mesh Found Datasheets File :: 1044    Search Time::3.859ms    
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    STP5NB100 STP5NB100FP

STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NB100 STP5NB100FP
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termi...
Description N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP Powermesh MOSFET

File Size 105.78K  /  9 Page

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    STP5NB40 STP5NB40FP 5321

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NB40 STP5NB40FP 5321
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, SGS-Thomson has designed an advanced family of Power MOSFETs with outstanding performance. The new patent pending strip layout coupled with the Company's proprietary edge termination s...
Description N-Channel Enhancement Mode PowermeshTM MOSFET(N沟道增强模式MOSFET)
N - CHANNEL ENHANCEMENT MODE Powermesh MOSFET
N - CHANNEL ENHANCEMENT MODE Powermesh] MOSFET
From old datasheet system

File Size 70.19K  /  7 Page

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    STP5NB60 STP5NB60FP 6767

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NB60 STP5NB60FP 6767
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termi...
Description N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP Powermesh MOSFET
N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP Powermesh MOSFET
N - CHANNEL 600V - 1.8 - 5A - TO-220/TO-220FP Powermesh TM MOSFET
From old datasheet system

File Size 106.93K  /  9 Page

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    STP5NB80 STP5NB80FP 6418

STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NB80 STP5NB80FP 6418
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termi...
Description From old datasheet system
N - CHANNEL 800V - 1.8W - 5A - TO-220/TO-220FP Powermesh] MOSFET
N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP Powermesh MOSFET

File Size 106.52K  /  9 Page

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    STP5NB90 STP5NB90FP 6166 5NB90 STP5NA90

STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STMicroelectronics N.V.
Part No. STP5NB90 STP5NB90FP 6166 5NB90 STP5NA90
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termi...
Description N-CHANNEL 900V - 2.3 OHM - 5A - TO-220/TO-220FP
From old datasheet system
ZENER DIODES
N - CHANNEL Powermesh MOSFET
N - CHANNEL 900V - 2.3 ohm - 5A - TO-220/TO-220FP Powermesh MOSFET -频道900V - 2.3欧姆- 5A TO-220/TO-220FP Powermesh MOSFET

File Size 45.04K  /  6 Page

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    STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1
OCR Text ...tion of the first generation of mesh OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLIC...
Description N-CHANNEL 500V - 1.3 OHM - 5.5A - TO-220/TO-220FP/D2PAK/I2PAK POWERmesh II MOSFET
N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK Powermesh?II MOSFET
N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowermeshII MOSFET
N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK Powermesh⑩II MOSFET

File Size 532.24K  /  12 Page

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    STP5NC70Z STP5NC70ZFP STB5NC70Z STB5NC70Z-1

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NC70Z STP5NC70ZFP STB5NC70Z STB5NC70Z-1
OCR Text ...RIPTION The third generation of mesh OVERLAYTM Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capabil...
Description N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/D?PAK/I?PAK Zener-Protected Powermesh⑩III MOSFET
N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowermeshIII MOSFET
N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/D2PAK/I2PAK Zener-Protected Powermesh?III MOSFET

File Size 347.13K  /  12 Page

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    STP5NC90Z STP5NC90ZFP STB5NC90Z STB5NC90Z-1

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NC90Z STP5NC90ZFP STB5NC90Z STB5NC90Z-1
OCR Text ...RIPTION The third generation of mesh OVERLAYTM Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capabil...
Description N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D?PAK/I?PAK Zener-Protected Powermesh⑩III MOSFET
N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowermeshIII MOSFET
N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D2PAK/I2PAK Zener-Protected Powermesh?III MOSFET

File Size 514.47K  /  13 Page

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    QT113 QT113-D QT113H QT113H-D QT113H-IS QT113H-S QT113-IS QT113-S

Quantum Research Group ltd
Electronic Theatre Controls, Inc.
ETC[ETC]
ATMEL Corporation
Part No. QT113 QT113-D QT113H QT113H-D QT113H-IS QT113H-S QT113-IS QT113-S
OCR Text ...2- can be made into a sparse mesh (Figure 1-3) having lower crumpled into a ball. Virtual ground planes are more effective Cx than a solid plane. Sensitivity may even remain the same, and can be made smaller if they are physically bonded...
Description 0.5-6.5V; 20mA; charge-transfer touch sensor. For light switches, industrial panels, appliance control, security systems, access systems, pointing devices, elevator buttoms, toys & games
CHARGE-TRANSFER TOUCH SENSOR 电荷转移触摸传感

File Size 178.26K  /  12 Page

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    QT118H QT118H-D QT118H-IS QT118H-S

Quantum Research Group ltd
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. QT118H QT118H-D QT118H-IS QT118H-S
OCR Text ...s own circuit ground to: sparse mesh (Figure 1-4) having lower Cx than a solid plane. Sensitivity may even remain the same, as the sensor will be operating in a lower region of the gain curves. (1) A nearby piece of metal or metallized hous...
Description 0.5-6.5V; 20mA; charge-transfer touch sensor. For light switches, industrial panels, appliance control, security systems, access systems, pointing devices, elevator buttoms, toys & games
CHARGE-TRANSFER TOUCH SENSOR 电荷转移触摸传感

File Size 431.32K  /  13 Page

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For mesh Found Datasheets File :: 1044    Search Time::3.859ms    
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