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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	LLE16045X
OCR Text	...TIONS IE = 0; VCB = 20 V IC = 1 ma; RBE = 220 IC = 1 ma IE = 1 ma IC = 0.25 A; VCE = 5 V - 30 45 3 15 MIN. PARAMETER thermal resistance from junction to mounting base CONDITIONS Tj = 100 C LLE16045X maX. 8.5 0.2 UNIT K/W K/W th...
Description	NPN microwave power transistor
File Size	75.36K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHB32N06LT PHP32N06LT PHP32N06L
OCR Text	...rce breakdown voltage ID = 0.25 ma; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 ma; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 60 V; VGS = 0 V Tj = 25 C Tj = 1...
Description	N-channel enhancement mode field effect transistor
File Size	95.92K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	IRF730
OCR Text	...CONDITIONS VGS = 0 V; ID = 0.25 ma VDS = VGS; ID = 0.25 ma MIN. 400 2.0 2 TYP. maX. UNIT 0.1 0.7 3.0 4 1 30 10 52 3 26 12 33 93 42 3.5 4.5 7...mb, Transient thermal impedance (K/W) D = 0.5 0.2 PHP3N60 0.1 0.1 0.05 0.02 0.01 single ...
Description	PowerMOS transistor Avalanche energy rated
File Size	55.04K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PSMN5R8-40YS
OCR Text	... A; VGS = 0 V; Tj = 25 C ID = 1 ma; VDS = VGS; Tj = -55 C; see Figure 10 ID = 1 ma; VDS = VGS; Tj = 175 C; see Figure 10 ID = 1 ma; VDS = VGS; Tj = 25 C; see Figure 11 and 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-...
Description	N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET N-channel LFPAK 40 V 5.7 m楼? standard level MOSFET
File Size	232.45K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PSMN5R6-100PS
OCR Text	...A; VGS = 0 V; Tj = -55 C ID = 1 ma; VDS= VGS; Tj = 25 C; see Figure 8 and 9 ID = 1 ma; VDS= VGS; Tj = 175 C; see Figure 9 ID = 1 ma; VDS= VGS; Tj = -55 C; see Figure 9 IDSS IGSS RDSon drain leakage current gate leakage current drain-source ...
Description	N-channel 100 V 5.6 mΩ standard level MOSFET N-channel 100 V 5.6 m楼? standard level MOSFET
File Size	199.07K / 13 Page	View it Online	Download Datasheet

				NJRC[New Japan Radio]
Part No.	NJM3770A NJM3770AD3 NJM3770AE2 NJM3770AFM2
OCR Text	...ange of current control 5 -1800 ma * Wide voltage range 10 - 45 V * Thermal overload protection * Packages DIP16 (Batwing) / PLCC28 / EMP20 ...mb & + - + - + - GND & & & 1 1 Output Stage Monostable t off = 0.69 * RT * ...
Description	STEPPER MOTOR DRIVER
File Size	172.95K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. Philips
Part No.	BUK753R1-40B BUK763R1-40B
OCR Text	...ce breakdown voltage i d = 0.25 ma; v gs =0v t j =25 c 40--v t j = - 55 c 36--v v gs(th) gate-source threshold voltage i d = 1 ma; v ds =v gs ; figure 9 t j =25 c 234v t j = 175 c 1--v t j = - 55 c - - 4.4 v i dss drain-source leakage ...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 40V V(BR)DSS \| 75A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 40V的五（巴西）直\| 75A条（丁）\|63AB TrenchMOS(TM) standard level FET
File Size	125.89K / 15 Page	View it Online	Download Datasheet

				Philips
Part No.	BUK7E2R7-30B
OCR Text	...ce breakdown voltage i d = 0.25 ma; v gs =0v t j =25 c30--v t j = - 55 c27--v v gs(th) gate-source threshold voltage i d = 1 ma; v ds =v gs ; figure 9 t j =25 c234v t j = 175 c1--v t j = - 55 c - - 4.4 v i dss drain-source leakage curr...
Description	Trenchmos (tm) standard level FET
File Size	112.88K / 16 Page	View it Online	Download Datasheet

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