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00GK04 100CA9 85010 SCI7630 LHI1148 APTM5 CSPB2412 VAL1Z
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    Suntan
Part No. CD293
OCR Text ... suntan ? technology company limited website: www.suntan.com.hk email: info@suntan.com.hk tel: (852) 8202 8782 fax: (852) 8208 6246 www.datasheet.co.kr datasheet pdf - http://www.datasheet4u.net/ aluminum electro...
Description ALUMINUM ELECTROLYTIC CAPACITOR

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    SEMTECH ELECTRONICS
Part No. BZT5246 BZT5249 BZT5240 BZT5247 BZT5242 BZT5245 BZT5248 BZT5260 BZT5266 BZT5264 BZT5262 BZT5263 BZT5267 BZT5261 BZT5268 BZT5259 BZT5223
OCR Text ...no-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) bzt52 series silicon planar zener diodes standard zener voltage tolerance is 20%. add suffix ?a? for 10% tolerance and...
Description (BZT52 Series) SILICON PLANAR ZENER DIODES

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    TY Semicondutor
Part No. AOTF11N60
OCR Text ...a r q cs r q jc * drain current limited by maximum junction temperatur e. 0.46 -- units c/w 65 0.5 65 2.5 aot11n60 aotf11n60 65 -- 3.3 aotf11n60l maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c c w mj v/ns a m...
Description Single N -Channel MOSFET

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    TY Semicondutor
Part No. AOTF10N50FD
OCR Text ...l r q ja r q jc * drain current limited by maximum junction tempera ture. aot10n50fd 65 2.5 50 0.4 power dissipation b p d t c =25c thermal characteristics 300 -55 to 150 c avalanche current c 216 single pulsed avalanche energy g 433 3.8...
Description Single N -Channel MOSFET

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    AON6454A

Alpha & Omega Semiconductors
Part No. AON6454A
OCR Text ... repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc...
Description 150V N-Channel MOSFET

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    SSF20N60H

Silikron Semiconductor Co.,LTD.
Part No. SSF20N60H
OCR Text ... the maximum current rating is limited by bond - wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - case thermal resi...
Description High dv/dt and avalanche capabilities

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Part No. V23990-P586-A
OCR Text ...3 a dauergrenzstrom t c =80c 40-limited by wires surge forward current t p =10ms t j =25c i fsm 250 a sto?strom grenzwert i 2 t-value t p =10ms t j =25c i 2 t 310 a 2 s grenzlastintegral power dissipation per diode t j =150c t h =80c p tot ...
Description 30 A, 600 V, N-CHANNEL IGBT

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    SQC575047 SQC322520 SQC322517 SQC322517HP SQC322520LT

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Part No. SQC575047 SQC322520 SQC322517 SQC322517HP SQC322520LT
OCR Text ... self temperature rise shall be limited to 35 max. inductance drop 10% typ. ? tolerance : j = 5% , k = 10% , m = 20% ? operating temp: (including self - temperature rise ) ? soldering heat: 260 10 seconds after 150 pr...
Description SMD Wire Wound Ferrite Chip Inductors
   SMD Wire Wound Ferrite Chip Inductors

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    NX6414EH

California Eastern Labs
Renesas Electronics Corporation
Part No. NX6414EH
OCR Text ...the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporate d into any products or systems whose manufacture, use, or sale is p...
Description LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION

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