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  l s b power gaas fet Datasheet PDF File

For l s b power gaas fet Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    HMC-APH478 H478

Hittite Microwave Corporation<br>
Part No. HMC-APH478 H478
Description 18000 MHz - 20000 MHz RF/MICROWAVE WIDE bAND MEDIUM power AMPlIFIER<br>GaAs HEMT MMIC 1 WATT power AMPlIFIER, 18 - 20 GHz<br>GaAs HEMT MMIC power AMPlIFIER<br>
File Size 205.07K  /  6 Page

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    NEC Corp.<br>NEC[NEC]<br>
Part No. NEs1821b-30
Description 30W l-bAND power GaAs fet N-CHANNEl GaAs MEs fet<br>
File Size 44.61K  /  8 Page

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    Anadigics Inc<br>
Part No. AWs5503 AWs5503s15
Description The AWs5503 is a single Pole Double Throw (sPDT) GaAs MMIC assembled in a MsOP-8 plastic package.<br>GaAs IC High power sPDT Reflective switch Positive Control DC-3 GHz<br>
File Size 534.92K  /  8 Page

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    NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4450-4D NEZ4450-4DD NEZ4450-8D NEZ4450-8DD NEZ3642-4D NEZ3642-8D NEZ364

NEC, Corp.<br>NEC Corp.<br>NEC[NEC]<br>http://<br>
Part No. NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4450-4D NEZ4450-4DD NEZ4450-8D NEZ4450-8DD NEZ3642-4D NEZ3642-8D NEZ3642-8DD NEZ6472-8DD NEZ6472-4DD NEZ6472-4D NEZ7177-4D NEZ7177-8DD NEZ5964-4D NEZ5964-4DD NEZ5964-8D NEZ5964-8DD NEZ6472-8D NEZ7177-4DD NEZ7177-8D
Description &nbsp;&nbsp;&nbsp;4W/8W C-bAND power GaAs fet N-CHANNEl GaAs MEs fet<br>4W/8W C-bAND power GaAs fet N-CHANNEl GaAs MEs fet 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体<br>CAP 15UF 16V 10% TANT sMD-6032-28 TR-7<br>CAP TANTAlUM 1.5UF 35V 10% sMD<br>20 characters x 4 lines, 5x7 Dot Matric Character and Cursor<br>VARIsTOR, 300VAC; series:VE; Voltage rating, AC:300V; suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20us:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHs Compliant: Yes<br>
File Size 106.86K  /  18 Page

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    Mitsubishi Electric Corporation<br>MITsUbIsHI[Mitsubishi Electric semiconductor]<br>
Part No. MGF0906 MGF0906b 0906b
Description ls bAND power GaAs fet<br>l /s bAND power GaAs fet<br>From old datasheet system<br>l,s bAND power GaAs fet<br>
File Size 124.25K  /  3 Page

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    NES2527B-30

NEC Corp.<br>
Part No. NEs2527b-30
Description 30 W s-bAND power GaAs fet N-CHANNEl GaAs MEs fet<br>
File Size 36.06K  /  4 Page

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    NE6500496

NEC<br>
Part No. NE6500496
Description 4 W l, s-bAND power GaAs fet N-CHANNEl GaAs MEs fet<br>
File Size 28.37K  /  6 Page

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    NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500199 NE8500199 NE85001

NEC Corp.<br>NEC[NEC]<br>
Part No. NE8500100 NE8500100-RG NE8500100-Wb NE500100 NE500199 NE8500199 NE85001
Description 1 W C-bAND power GaAs fet N-CHANNEl GaAs MEs fet<br>
File Size 39.83K  /  6 Page

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    Mitsubishi Electric Corporation<br>
Part No. MGF0904A
Description MITsUbIsHI sEMICONDUCTOR (GaAs fet) l, s bAND power GaAs fet<br>
File Size 111.33K  /  3 Page

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    Mimix broadband, Inc.<br>
Part No. XP1022-QF-0N00 XP1022-QF-EV1
Description 17.0-25.0 GHz GaAs MMIC power Amplifier, QFN 17000 MHz - 25000 MHz RF/MICROWAVE WIDE bAND MEDIUM power AMPlIFIER<br>17.0-25.0 GHz GaAs MMIC power Amplifier, QFN 17.0-25.0千兆赫的GaAs MMIC功率放大器,QFN封装<br>
File Size 867.55K  /  8 Page

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