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For j-die Found Datasheets File :: 19515 Search Time::1.485ms
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				Vishay Semiconductors
Part No.	SC202S030A5BT
OCR Text	...0 20 8 0.42 v @ 40a per die, t j = 25c sc202 s 030a5 150 30 2 0.46v @ 30a per die, t j = 25c sc202 s 045a5 150 45 2 0.51 v @ 20a per die, t j = 25c sc202 s 060a5 150 60 2 0.54v @ 15a per die, t j = 25c sc202 h 100a5 150 100 0.55 0.69 v ...
Description	DIODE SILICON, RECTIFIER DIODE, 0.200 X 0.200 INCH, DIE-2, Rectifier Diode
File Size	113.98K / 4 Page	View it Online	Download Datasheet

				VISHAY INTERTECHNOLOGY INC
Part No.	SC202H045A5B SC202R030A5B
OCR Text	...0 20 8 0.42 v @ 40a per die, t j = 25c sc202 s 030a5 150 30 2 0.46v @ 30a per die, t j = 25c sc202 s 045a5 150 45 2 0.51 v @ 20a per die, t j = 25c sc202 s 060a5 150 60 2 0.54v @ 15a per die, t j = 25c sc202 h 100a5 150 100 0.55 0.69 v ...
Description	45 V, SILICON, RECTIFIER DIODE 30 V, SILICON, RECTIFIER DIODE
File Size	131.01K / 5 Page	View it Online	Download Datasheet

				Maxim Integrated Products Maxim Integrated Produc...
Part No.	MAX9975 MAX9975ARCCQ MAX9975AZCCQ
OCR Text	...0v, v gs = 0v, r hys_ = open, t j = +85?, unless otherwise noted. all temperature coeffi- cients are measured at t j = +60? to +100?, unless otherwise noted.) (note 1) stresses beyond those listed under ?bsolute maximum ratings?may cause pe...
Description	Dual, Low-Power, 1200Mbps ATE Driver/Comparator with 35mA Load Dual, Low-Power, 1200Mbps ATE Driver/Comparator with 35mA Load
File Size	883.10K / 32 Page	View it Online	Download Datasheet

				Central Semiconductor Corp Central Semiconductor C...
Part No.	CPC01
OCR Text	...storage junction temperature t j , t stg -55 to +225 c electrical characteristics: (t a =25c unless otherwise noted) symbol test condit...die 10 amp, 1200 volt applications: ? power inverters ? industrial motor drives ? switch-mode pow...
Description	Silicon Carbide Schottky Rectifier Die 10 Amp, 1200 Volt
File Size	512.83K / 2 Page	View it Online	Download Datasheet

				OSRAM
Part No.	LWETSG
OCR Text	...rature sperrschichttemperatur t j 125 c junction temperature sperrschichttemperatur t j >150 for short term applications c forward current ...die standardlieferform von serientypen beinhaltet entweder eine untere familiengruppe, eine obere fa...
Description	Power TOPLED
File Size	482.28K / 23 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CPW2-0650-S008B
OCR Text	...) average forward current 8 a t j =175?c i frm repetitive peak forward surge current 57 a t c =25?c, t p = 10 ms, half sine wave, d=0.3 1 i...die size 1.77 x 1.77 mm anode pad size 1.45 x 1.45 mm anode pad opening 1.38 x 1.38 mm thickness 377...
Description	Silicon Carbide Schottky Diode Chip
File Size	147.16K / 3 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CPW2-0650-S006B
OCR Text	...) average forward current 6 a t j =175?c i frm repetitive peak forward surge current 41 a t c =25?c, t p = 10 ms, half sine wave, d=0.3 1 i...die size 1.55 x 1.55 mm anode pad size 1.29 x 1.29 mm anode pad opening 1.08 x 1.08 mm thickness 377...
Description	Silicon Carbide Schottky Diode Chip
File Size	146.77K / 3 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CPW2-0600S008 CPW2-0600S008B CPW2-0600-S008B
OCR Text	...) average forward current 8 a t j =175?c i frm repetitive peak forward surge current 57 a t c =25?c, t p = 10 ms, half sine wave, d=0.3 1 i...die size 1.77 x 1.77 mm anode pad size 1.45 x 1.45 mm anode pad opening 1.38 x 1.38 mm thickness 377...
Description	Silicon Carbide Schottky Diode Chip
File Size	146.68K / 3 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CPW2-0600S006B CPW2-0600-S006B
OCR Text	...) average forward current 6 a t j =150?c i frm repetitive peak forward surge current 30 a t c =25?c, t p =10 ms, half sine wave 1 i fsm non-...die size 1.55 x 1.55 mm anode pad size 1.29 x 1.29 mm anode pad opening 1.08 x 1.08 mm thickness 377...
Description	Silicon Carbide Schottky Diode Chip
File Size	157.45K / 3 Page	View it Online	Download Datasheet


Part No.	IRGC75B120KB
OCR Text	...8v min, 1.35v max i c = 10a, t j = 25c, v ge = 15v v (br)ces colletor-to-emitter breakdown voltage 1200v min t j = 25c, i ces = 750a, v...die: length & wi dt h bonding pads: 9.854 [.388] e = emitter not es : 1. all dimens ions are s ...
Description	1200 V, N-CHANNEL IGBT
File Size	18.42K / 1 Page	View it Online	Download Datasheet

For j-die Found Datasheets File :: 19515 Search Time::1.485ms
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