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Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Siemens Group
SIEMENS AG
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| Part No. |
LD242E7800 Q62703-Q3509 LD242 LD242-2 LD242-3 Q62703-Q198 Q62703-Q199
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| OCR Text |
ir-lumineszenzdiode GaAs Infrared Emitter
LD 242
o0.45
2.54 mm spacing
Chip position
o4.3 o4.1
1 0.9 .1 1.1 .9 0
2.7
1
14.5 12.5
3.6 3.0
o5.5 o5.2
GET06625
Anode (LD 242, BPX 63, SFH 464) Cathode (SFH 483) A... |
| Description |
GaAs Infrared Emitter
DSUB 11X1 M PCB G30 砷化镓红外发射器
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| File Size |
38.62K /
5 Page |
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it Online |
Download Datasheet
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
SFH4301 Q62702-P5166
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| OCR Text |
ir-lumineszenzdiode (950 nm) im 3 mm Radial-Gehause High-Speed Infrared Emitter (950 nm) in 3 mm Radial Package SFH 4301
Wesentliche Merkmale * Hohe Pulsleistung und hoher Gesamtstrahlungsflu e * Sehr kurze Schaltzeiten (10 ns) * Sehr ho... |
| Description |
High-Speed Infrared Emitter (950 nm) in 3 mm Radial Package
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| File Size |
54.47K /
6 Page |
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it Online |
Download Datasheet |
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Osram Opto Semiconductors GmbH
OSRAM[OSRAM GmbH]
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| Part No. |
F2000D
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| OCR Text |
...s Sperrspannung Reverse voltage IR = 1A Durchlaspannung Forward voltage IF = 400 mA, tp = 1.8 ms Lichtstrom Luminous Flux3) IF = 400 mA, tp = 1.8 ms
1)
Symbol Symbol min. dom 613
Wert Value2) typ. max. 623
Einheit Unit nm
VR
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| Description |
InGaAlP-High Brightness-Lumineszenzdiode (617nm, High Current and Flux), InGaAlP High Brightness LED (617nm, High Current and Flux)
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| File Size |
211.09K /
6 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62703-Q67 LD261 LD261-5 Q62703-Q395
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| OCR Text |
ir-lumineszenzdiode GaAs Infrared Emitter
Chip position
LD 261
2.4 2.1
1.9 1.7
0.5 0.4
2.7 2.5
0.25 0.15
0.7 0.6
0 ... 5
0.4 A
A Radiant sensitive area (0.4 x 0.4) 1.4 1.0 Collector (BPX 81) Cathode (LD 261)
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| Description |
GaAs-ir-lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
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| File Size |
34.92K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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