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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ... 25oC, L = 4.5mH, RG = 25, peak ias = 8.1A. See Figures 15, 16. 5-3 IRF234, IRF235, IRF236, IRF237 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) Unless Otherwise Specified 10 8 IRF234,...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

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    LFSW80210-50

SYNERGY MICROWAVE CORPORATION
SYNERGY MICROWAVE CORPO...
Part No. LFSW80210-50
OCR Text ...oltage 1.0 v p-p to 3.3 v p-p b ias voltage vcc v (vdc) i (ma max.) digital +5 50 vco +5 35 converter +5 55 lock detect indicator cmos 3.3 v output power +4 dbm (min.) spurious suppression 76 db (typ.) harmonic suppression 15 db (typ.) set...
Description INTELLIGENT INTERACTIVE SYNTHESIZER

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    2SJ687 2SJ687-ZK-E1-AY 2SJ687-ZK-E2-AY

NEC
Part No. 2SJ687 2SJ687-ZK-E1-AY 2SJ687-ZK-E2-AY
OCR Text ...valanche Energy Note2 Note2 ias EAS Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = -10 V, RG = 25 , VGS = -12 0 V The information in this document is subject to change without notice. Before using this document, p...
Description MOS FIELD EFFECT TRANSISTOR

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    2SK3402-Z 2SK3402

NEC[NEC]
Part No. 2SK3402-Z 2SK3402
OCR Text ...valanche Energy Note2 Note2 ias EAS Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V The information in this document is subject to change without notice. Before using this document, ple...
Description Nch power MOS FET
SWITCHING N-CHANNEL POWER MOSFET

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    FDI2532 FDP2532 FDB2532 FDP2532NL

FAIRCHILD[Fairchild Semiconductor]
Part No. FDI2532 FDP2532 FDB2532 FDP2532NL
OCR Text ... Starting TJ = 25C, L = 0.5 mH, ias = 40A. 2: Pulse Width = 100s (c)2002 Fairchild Semiconductor Corporation FDB2532 / FDP2532 / FDI2532 Rev. B FDB2532 / FDP2532 / FDI2532 Typical Characteristics TA = 25C unless otherwise noted ...
Description N-Channel PowerTrench MOSFET 150V, 79A, 16m?/a>
150V Channel UltraFET Trench MOSFET
N-Channel PowerTrench MOSFET 150V, 79A, 16mOhm
N-Channel PowerTrench MOSFET 150V, 79A, 16mз
N-Channel PowerTrench MOSFET 150V/ 79A/ 16m

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ...= 1.0MHz, See Fig. 5 1280340 mJ ias = 50A, L = 370H Typ. --- 0.074 --- --- --- --- --- --- --- --- --- --- 13 64 49 48 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Sourc...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ...= 1.0MHz, See Fig. 5 1280340 mJ ias = 50A, L = 370H Typ. --- 0.074 --- --- --- --- --- --- --- --- --- --- 13 64 49 48 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Sourc...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

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    IRFP054VPBF

International Rectifier
Part No. IRFP054VPBF
OCR Text ...= 1.0MHz, See Fig. 5 1080220 mJ ias = 90A, L = 54H Typ. --- 0.066 --- --- --- --- --- --- --- --- --- --- 22 160 77 110 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Sour...
Description HEXFET? Power MOSFET ( VDSS = 60V , RDS(on) = 9.0mΩ , ID = 93A )
HEXFET㈢ Power MOSFET ( VDSS = 60V , RDS(on) = 9.0mヘ , ID = 93A )

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    IRF3710LPBF IRF3710SPBF

International Rectifier
Part No. IRF3710LPBF IRF3710SPBF
OCR Text ...= 1.0MHz, See Fig. 5 1060280 mJ ias = 28A, L = 0.70mH Typ. --- 0.13 --- --- --- --- --- --- --- --- --- --- 12 58 45 47 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Sour...
Description HEXFET? Power MOSFET ( VDSS = 100V , RDS(on) = 23mΩ , ID = 57A )
HEXFET㈢ Power MOSFET ( VDSS = 100V , RDS(on) = 23mヘ , ID = 57A )

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    BUZ71A

Intersil Corporation
Part No. BUZ71A
OCR Text ...VARY tP TO OBTAIN REQUIRED PEAK ias VGS DUT tP RG ias VDD tP VDS VDD + 0V ias 0.01 0 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 9...
Description 13A/ 50V/ 0.120 Ohm/ N-Channel Power MOSFET
13A, 50V, 0.120 Ohm, N-Channel Power MOSFET

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