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MTD1302 MUR152 D2069 BJ8P56AM R0100 10JDA60 KM48C512 BPW17N
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  fig. Datasheet PDF File

For fig. Found Datasheets File :: 90574    Search Time::2.421ms    
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    AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA

ETC
ANACHIP[Anachip Corp]
Part No. AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA
OCR Text ... Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Cu...
Description P-Channel 30-V (D-S) MOSFET
P-Channel Enhancement Mode Power MOSFET

File Size 245.21K  /  6 Page

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    AS1117 AS1117M1 AS1117M1-X AS1117M3 AS1117M3-X AS1117R AS1117R-X AS1117S AS1117S-X AS1117T AS1117T-X AS1117U AS1117U-X A

ALPHA Semiconductor
Alpha Industries Inc
ETC[ETC]
ALPHA[Alpha Industries]
Alpha Industries, Inc.
Part No. AS1117 AS1117M1 AS1117M1-X AS1117M3 AS1117M3-X AS1117R AS1117R-X AS1117S AS1117S-X AS1117T AS1117T-X AS1117U AS1117U-X AS1117R-5V AS1117R-2.85V AS1117R-1.5V AS1117R-3.3V AS1117S-3V AS1117M1-3V AS1117U-5V AS1117T-2.5V AS1117T-2.85V AS1117M1-2.85V AS1117M1-5V AS1117M1-2.5V AS1117M3-5V AS1117S-2.5V
OCR Text ...5mA) = (7.15)(105mA) = 750mW fig. 1. Circuit Layout, Thermal Experiments. THERMAL CHARACTERISTICS The thermal resistance of AS1117 is 15C/W from junction to tab and 31 C/W from tab to ambient for a total of 46 C/W from junction to am...
Description 800mA low dropout regulator 2,5V
800mA low dropout regulator 3V
800mA low dropout regulator 1,5V
800mA low dropout regulator 5V
800mA Low Dropout Regulator SCSI-II Active Terminator
AB 2C 2#16 SKT RECP
800mA low dropout regulator 2,85V
800mA low dropout regulator 3,3V

File Size 75.37K  /  11 Page

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    BA3131FS BA3131

Rohm CO.,LTD.
ROHM[Rohm]
Part No. BA3131FS BA3131
OCR Text ...pin open Measurement circuit fig.2 fig.1 fig.1 fig.1 fig.1 fig.1 RS 10k RL 2k, VO = 1.5V RS 10k RS 10k RL 10k RL 2k 2 fig.1 fig.1 fig.3 / fig.4 fig.7 - Ioref = 1mA 1 Because the first stage is contigured with PNP ...
Description Dual operational amplifier with switch, for audio use (3 inputs × 1 output × 2)
ER 14C 14#16 PIN PLUG
Dual operational amplifier with switch/ for audio use (3 inputs 1 output 2)
Dual operational amplifier with switch, for audio use (3 inputs 1 output 2)
Dual operational amplifier with switch, for audio use (3 inputs 】 1 output 】 2)
Standard Linear LSIs > Operational amplifier > Operational amplifier with input multiplexer

File Size 107.77K  /  9 Page

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    BAT54C-7 BAT54S-7 BAT54A-7 BAT54-7 BAT54 BAT54S BAT54A BAT54C

NXP Semiconductors N.V.
Diodes, Inc.
Diodes Inc.
DIODES[Diodes Incorporated]
Part No. BAT54C-7 BAT54S-7 BAT54A-7 BAT54-7 BAT54 BAT54S BAT54A BAT54C
OCR Text ...TANTANEOUS FORWARD VOLTAGE (mV) fig. 2, Typical Forward Characteristics TA, AMBIENT TEMPERATURE (C) fig. 1 Power Derating Curve IR, LEAKAGE CURRENT (A) 1000 VR = 25V 100 10 1 0.1 0 50 100 150 Tj, JUNCTION TEMP...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE

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    BAT54CFILM BAT54SFILM BAT54AFILM BAT54FILM 5505 BAT54S BAT54C BAT54A BAT54 BAT54.A.C.S

SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BAT54CFILM BAT54SFILM BAT54AFILM BAT54FILM 5505 BAT54S BAT54C BAT54A BAT54 BAT54.A.C.S
OCR Text ...R = 10 mA Tj = 25C RL = 100 fig.1 : Average forward power dissipation versus average forward current. PF(av)(W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 IF(av) (A) 0.00 0.00 0.05 0.10 0.15 0.20 =tp/T tp T fig.2 : Average forward current...
Description SMALL SIGNAL SCHOTTKY DIODE
SMALL SIGNAL SCHOTTKY DIODE
From old datasheet system

File Size 82.55K  /  5 Page

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    BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES

NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES
OCR Text ... k1 k2 CW a1 a2 SW a1 k2 k1, a2 fig.3 handbook, 2 columns 1 2 MLC360 3 a1, a2 k1, k2 3 BAT54AW diode configuration (symbol). 3 1 Top view fig.1 2 1 2 MLC359 MBC870 Simplified outline (SOT323) and pin configu...
Description Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes

File Size 29.07K  /  5 Page

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    BFG520W BFG520W_X BFG520W/X

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFG520W BFG520W_X BFG520W/X
OCR Text ...TIONS CODE N3 N4 Top view fig.1 Simplified outline SOT343N. MIN. - - - - 60 - - TYP. MAX. UNIT - - - - 120 0.35 9 17 17 1.1 20 15 70 500 250 - - - - 1.6 pF GHz dB dB dB V V mA mW IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C ...
Description NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors

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    BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text ...r fpage 4 3 BFG520 (fig.1) Code: N36 1 Top view 2 MSB014 BFG520/X (fig.1) Code: N42 collector emitter base emitter collector emitter base emitter fig.1 SOT143B. handbook, 2 columns 3 4 BFG520/XR (fig.2) Code: N4...
Description NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体

File Size 146.07K  /  13 Page

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    TOSHIBA
Part No. TK72E08N1
OCR Text ... 28 93 max unit pf ? ns fig. fig. fig. fig. 6.2.1 6.2.1 6.2.1 6.2.1 switching time test circuit switching time test circuit switching time test circuit switching time test circuit 6.3. 6.3. 6.3. 6.3. gate charge characterist...
Description Power MOSFET (N-ch single 60V<VDSS≤150V)

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ...ating frequency (over 5kHz) See fig. 1 for Current vs. Frequency curve 7 13 19 Product Summary Output Current in a Typical 20 kHz Motor Drive 11 ARMS per phase (3.1 kW total) with TC = 90C, T J = 125C, Supply Voltage 360Vdc, Po...
Description IGBT SIP MODULE

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