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evm Datasheet PDF File

For evm Found Datasheets File :: 1981 Search Time::0.922ms
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				INFINEON[Infineon Technologies AG]
Part No.	PTF180101 PTF180101S
OCR Text	... = 19.0 dB - Efficiency = 28% - evm = 1.1 % Typical WCDMA performance - Average output power = 1.8 W - Gain = 18.0 dB - Efficiency = 20% - ACPR = -45 dBc Typical CW performance - Output power at P-1dB = 15 W - Efficiency = 50% Integrated ES...
Description	LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
File Size	306.52K / 10 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF180601 PTF180601C PTF180601E
OCR Text	...lifetime and reliability. EDGE evm Performance evm & Efficiency vs. Power Output VDD = 28 V, IDQ = 0.8 A, f = 1989.8 MHz 4 40 Features * * Broadband internal matching Typical two-tone performance - Average output power = 30 W - Gain ...
Description	LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS的场效应晶体0瓦，DCS / PCS的兆赫波8050年，1930-1990兆赫 LDMOS Field Effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
File Size	229.29K / 11 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF180901E PTF180901F
OCR Text	... = 14.5 dB - Efficiency = 32% - evm = 1.7% AVG - ACPR @ 400 KHz = -60 dBc - ACPR @ 600 KHz = -74 dBc Typical two-tone performance - Output power = 90 W PEP - Gain = 15 dB - Efficiency = 36% - IM3 = -30 dBc - 1 MHz tone spacing Ty p e L i...
Description	GSM/EDGE RF Power FET
File Size	164.90K / 2 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF181301 PTF181301A
OCR Text	... = 15.5 dB - Efficiency = 32% - evm = 1.7% Typical CW performance - Output power at P-1dB = 150 W - Gain = 14.5 dB - Efficiency = 47% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift C...
Description	LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦，1805年至1880年兆 LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
File Size	63.03K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers Sirenza Microdevices ETC[ETC] Electronic Theatre Controls, Inc.
Part No.	STA-6033
OCR Text	...B Performance Pout = 18dBm @ 3% evm, 3.3V, 210mA Output Return Loss < -12dB for Linear Tune On-chip Output Power Detector Simultaneous 4.9- 5.9GHz Broadband Pin Compatible with Microsemi LX5506 Robust - Survives RF Input Power = +20dBm Powe...
Description	Product Description
File Size	256.20K / 8 Page	View it Online	Download Datasheet

For evm Found Datasheets File :: 1981 Search Time::0.922ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |