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MOTOROLA[Motorola, Inc]
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| Part No. |
AN211A
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| OCR Text |
...r words, drain current flow is "enhanced" by the gate potential. Thus drain current flow can be modulated by the gate voltage; i.e. the chan...JFET. Figure 4 shows the development. The substrate may be high resistivity p-type material, as for ... |
| Description |
FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE
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| File Size |
327.70K /
12 Page |
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