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  effect-based Datasheet PDF File

For effect-based Found Datasheets File :: 8065    Search Time::1.438ms    
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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO7600
OCR Text ...ementary enhancement mode field effect transistor general description www.freescale.net.cn 1 / 7 symbol min typ max units bv dss 20 v 1 t ...based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junc...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 716.21K  /  7 Page

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    ACS760ELF-20B ACS760ELF-20B13

Allegro MicroSystems
Part No. ACS760ELF-20B ACS760ELF-20B13
OCR Text effect current sense technology with a hot-swap controller resulting in a more efficient integrated controller for 12 v applications. by ...based current monitor ic package: 24 pin qsop (suffix lf) typical application approximate scale acs7...
Description 12 V High-Side Hot-Swap Hall Effect Based Current Monitor IC

File Size 609.20K  /  15 Page

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    ACE6428B

ACE Technology Co., LTD.
Part No. ACE6428B
OCR Text ...channe l enhancement mode field effect transistor ver 1. 2 1 d escription the ace 6428b uses advanced trench technology...based on r ja and the maximum allowed junction temperature of 150c. the value in any given applic...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 703.29K  /  8 Page

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    ATS636LSE12 ATS636LSETN-T

Allegro MicroSystems
Part No. ATS636LSE12 ATS636LSETN-T
OCR Text effect ic and rare-earth pellet combinations that switch in response to magnetic signals created by ferromagnetic targets in gear-tooth se...based configurations, or for proximity sensing with ferromagnetic targets. 635lse-ds, rev. 5 featur...
Description The ATS636LSE programmable, true power-on state (TPOS), device is optimized Hall-effect IC and rare-earth pellet combinations that switch in response to magnetic signals...

File Size 360.20K  /  15 Page

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    MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconductor]
Part No. DS87000 87000
OCR Text ...ice. The lock bits also have an effect on this function. If either of the two highest levels of lock are written to the device, the data read will be all ones. Verify Verify that the device's EPROM contains the same information as the progr...
Description Microcontroller Programmer
From old datasheet system

File Size 40.63K  /  10 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO5600E
OCR Text ...ementary enhancement mode field effect transistor general description www.freescale.net.cn 1 / 9 symbol min typ max units bv dss 20 v 1 t ...based on t j(max) =150c, using the steady state junction-to-ambient thermal resistance. b. the power...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 1,451.08K  /  9 Page

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    DS1780

Dallas Semiconductor
Dallas Semiconducotr
Part No. DS1780
OCR Text ...tions. Each one has a different effect on register contents and the state of the RST output following the event. Each one is explained below...based on R2 to provide a minimum input of 2V and a maximum of VDD. R1 should be as low as possible t...
Description CPU Peripheral Monitor

File Size 370.24K  /  28 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOI4185
OCR Text ... mode field general description effect transistor features symbol min typ max units bv dss -40 v -1 t j =55c -5 i gss 100 na v gs(th) -1.7...based on t j(max) =150 c, using steady state junction-to-ambient thermal r esistance. b. the power ...
Description P-Channel Enhancement Mode Field

File Size 380.63K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOI409
OCR Text ... mode field general description effect transistor features symbol min typ max units bv dss -60 v -0.003 -1 t j =55c -5 i gss 100 na v gs(t...based on r ja and the maximum allowed junction temperature of 150c. the value in any a given appl...
Description P-Channel Enhancement Mode Field

File Size 567.99K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOD609
OCR Text ... general description mode field effect transistor features symbol min typ max units bv dss 40 v 1 t j =55c 5 i gss 100 na v gs(th) 1.7 2.5...based on t j(max) =150c, using the steady state junction-to-ambient thermal resistance. b. the power...
Description Complementary Enhancement

File Size 733.43K  /  9 Page

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