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ST60100 00BZXI 395DPA M6244 ATS04 UC2843N 2N2ST T2202
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For crp Found Datasheets File :: 471    Search Time::0.797ms    
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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM53216000BV
OCR Text ... cas to ras precharge time t crp 5 5 ns row address set-up time t asr 0 0 ns row address hold time t rah 10 10 ns column address set-up time t asc 0 0 ns column address hold time t cah 10 10 ns column address to ras lead time t r...
Description 16M x 32 DRAM SIMM(16M x 32 动RAM模块)

File Size 343.16K  /  19 Page

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    MAXIM - Dallas Semiconductor
Part No. MAX3270
OCR Text ...-4.5V -4.5V -4.5V ANALOG SUPPLY crp 26 25 31 30 28 50 50 50 50 450 -4.5V MAX3270 FILP FILG AVEE1 AVEE2 GVEE DVEE DVEE DVEE DVEE DVEE FILN FM 9 8 10 6 2.2F 20 2.2F 20 50 12 1 35 36 22 21 34 -4.5V DIGITAL SUPPLY BYPASS S...
Description 155Mbps/622Mbps Clock Recovery and Data Retiming IC with Fully Integrated Phase Frequency Detector

File Size 250.49K  /  12 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM5364005BSWG
OCR Text ... cas to ras precharge time t crp 5 5 ns row address set-up time t asr 0 0 ns row address hold time t rah 10 10 ns column address set-up time t asc 0 0 ns column address hold time t cah 8 10 ns column address to ras lead time t ra...
Description 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V

File Size 389.50K  /  19 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM5361203C2W
OCR Text ... cas to ras precharge time t crp 5 5 ns row address set-up time t asr 0 0 ns row address hold time t rah 10 10 ns column address set-up time t asc 0 0 ns column address hold time t cah 10 10 ns column address to ras lead time t r...
Description 1M x 36 DRAM SIMM(1M x 36 动RAM模块)

File Size 235.89K  /  16 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM5368005BSW
OCR Text ... cas to ras precharge time t crp 5 5 ns row address set-up time t asr 0 0 ns row address hold time t rah 10 10 ns column address set-up time t asc 0 0 ns column address hold time t cah 8 10 ns column address to ras lead time t ra...
Description 8M x 36 DRAM SIMM(8M x 36 动RAM模块)

File Size 393.31K  /  19 Page

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    KMM372F213CS KMM372F213CK KMM372F1600BK

Samsung Semiconductor Co., Ltd.
Part No. KMM372F213CS KMM372F213CK KMM372F1600BK
OCR Text ... cas to ras precharge time t crp 10 10 ns 14 row address set-up time t asr 5 5 ns 14 row address hold time t rah 8 8 ns 14 column address set-up time t asc 0 0 ns column address hold time t cah 8 10 ns column address to ras lead tim...
Description 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 1,600 × 72的DRAM内存ECC的使6Mx4KK的刷新,3.3

File Size 456.86K  /  20 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM5116400D-60 MSM5116400D-50TS-K MSM5116400D-60SJ MSM5116400D-50SJ
OCR Text ... ns cas to ras precharge time t crp 5 ? 5 ? 5 ? ns ras hold time from cas precharge t rhcp 30 ? 35 ? 40 ? ns ras to cas delay time t rcd 17 37 20 45 20 50 ns 5 ras to column address delay time t rad 12 25 15 30 15 35 ns row address set-up t...
Description 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 4194304字4位动态随机存储器:快速页面模式型

File Size 162.98K  /  14 Page

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    KMM5321200C2W

Samsung Semiconductor
Part No. KMM5321200C2W
OCR Text ... cas to ras precharge time t crp 5 5 ns row address set-up time t asr 0 0 ns row address hold time t rah 10 10 ns column address set-up time t asc 0 0 ns column address hold time t cah 10 10 ns column address to ras lead time t r...
Description 1M x 32 DRAM SIMM

File Size 268.90K  /  17 Page

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    KMM53216004BK

Samsung Semiconductor
Part No. KMM53216004BK
OCR Text ... cas to ras precharge time t crp 5 5 ns row address set-up time t asr 0 0 ns row address hold time t rah 10 10 ns column address set-up time t asc 0 0 ns column address hold time t cah 8 10 ns column address to ras lead time t ra...
Description 16MBx32 DRAM Simm Using 16MBx4

File Size 401.13K  /  19 Page

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