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800v us Datasheet PDF File

For 800v us Found Datasheets File :: 795 Search Time::1.64ms
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				Taiwan Semiconductor Co., Ltd. TSC[Taiwan Semiconductor Company, Ltd]
Part No.	TS13003ACTB0 TS13003A TS13003ACTA3
OCR Text	800v Ic = 1.5A VCE (SAT), = 0.8V @ Ic / Ib = 0.5A / 0.1A Pin assignment: 1. Emitter 2. Collector 3. Base Features High voltage. High ...us us us V V V uA uA V Conditions Symbol Min Typ Max Unit Note : pulse test: pu...
Description	ECONOLINE: RBM - New Micro Size SIP 6 Package- Industry Standard Pinout- 3kVDC Isolation- UL94V-0 Package Material- Efficiency to 85% High Voltage NPN Transistor
File Size	42.09K / 3 Page	View it Online	Download Datasheet

				KODENSHI KOREA CORP.
Part No.	STK0380D
OCR Text	... cut-off current i dss v ds =800v, v gs =0v - - 10 ua v ds =640v, t c =125 ? c - - 100 ua gate leakage current i gss v ds =0v, v g...us - 372 - ns reverse recovery charge (note 4,5) q rr - 1.8 - uc note: 1. repeated rati...
Description	SWWITCHINNG REGGULATOOR APPLICATIOON
File Size	370.19K / 8 Page	View it Online	Download Datasheet

				Solid States Devices, Inc Solid States Devices, I...
Part No.	SDR9511NDB SDR9511NDBS SDR9511NDBTX SDR9511NDBTXV SDR958S2UB SDR959S2UB SDR9510S2UB SDR9511S2UB SDR9512S2UB SDR958S2UBS SDR959S2UBS SDR9510S2UBS SDR9511S2UBS SDR959NDB SDR959NDBS SDR959NDBTX SDR959NDBTXV SDR9510NDB SDR9510NDBS SDR9510NDBTX SDR9510NDBTXV SDR9510NS SDR9510NTX SDR9510NTXV SDR9510NUB SDR9510NUBS SDR9510NUBTX SDR9510NUBTXV SDR9511NUB SDR9511NUBS SDR9511NUBTX SDR9511NUBTXV SDR959S2DB SDR959S2DBS SDR959S2DBTX SDR959S2DBTXV SDR959S2S SDR959S2TX SDR959S2TXV SDR959S2UBTX SDR959S2UBTXV SDR958S2UBTX SDR9510S2UBTX SDR9511S2UBTX SDR9512S2UBTX SDR958PUBTX SDR959PUBTX SDR9510PUBTX SDR9511PUBTX SDR9512PUBTX SDR958NUBTX SDR959NUBTX SDR9512NUBTX SDR9510N SDR9510P SDR9510PDB SDR9510PDBS SDR9510PDBTX SDR9510PDBTXV SDR9510PS SDR9510PTX SDR9510PTXV SDR9510PUB SDR9510PUBS SDR958NUB SDR958NUBS SDR958NUBTXV SDR9511PTX SDR9511PTXV SDR9512NUB SDR9512NUBS SDR9512NUBTXV SDR958PUB SDR958PUBS SDR958PUBTXV SDR9512PUB SDR9512PUBS SDR9512PUBTXV SDR959N SDR959NS SDR959NTX SDR959NTXV SDR959NUB SDR959NUBS SDR959NUBTXV SDR959P SDR959PDB SDR959PDBS SDR959PDBTX SDR959PDBTXV SDR959PS SDR959PTX SDR959PTXV SDR959PUB SDR959PUBS SDR959PUBTXV SDR959S2 SDR9510PUBTXV SDR9510S2 SDR9510S2DB SDR9511PDBTXV SDR9511PDB
OCR Text	...-258 P = TO-259 S2 = SMD2 958 = 800v 959 = 900V 9510 = 1000V 9511 = 1100V 9512 = 1200V Family/Voltage Maximum Ratings Peak Repetitive...us) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 45A/us) (IF = 10 A, dIF /dt = 45A/us) (IF =...
Description	50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier
File Size	97.08K / 3 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Semikron International ETC List of Unclassifed Manufacturers
Part No.	SKM100GB125DN
OCR Text	...A nF VGE = 0 V f = 1 MHz 800v 10 Cies 1 Coes C VGE 2 0 0Q Gate 200 400 600 nC 800 0,1 0 VCE 10 20 V Cres 30 Fig. 13...us 5000 Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; RG) Fig. 23 Typ. CAL...
Description	SEMITRANSR M Ultra Fast IGBT Modules
File Size	121.05K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp.
Part No.	FJI5603D FJI5603DTU
OCR Text	....5mA, IC=0 VCES=1600V, IE=0 VCE=800v, VBE=0 VEB=12V, IC=0 VCE=3V, IC=0.4A VCE=10V, IC=5mA TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25...us),TIME TJ=125 C 300 o 2.5 TJ=125 C o 2 200 TJ=25 C o 1.5 TJ=25 C...
Description	NPN Silicon Transistor; Package: TO-262(I2PAK); No of Pins: 3; Container: Rail 3 A, 800 V, NPN, Si, POWER TRANSISTOR
File Size	139.62K / 7 Page	View it Online	Download Datasheet

				Taiwan Semiconductor Compan... Taiwan Semiconductor Company, Ltd
Part No.	TS13003HV07 TS13003HV TS13003HVCT
OCR Text	..., IE = 0 IE = 1mA, IC = 0 VCB = 800v, IE = 0 VEB = 10V, IC = 0 IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A IC / IB = 1.5A / 0.5A Base-Emitt...us us us us VCE = 10V, IC = 400mA VCE = 10V, IC = 1A hFE BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(S...
Description	High Voltage NPN Transistor
File Size	276.44K / 5 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	LX1802
OCR Text	...est conditions: VHI=16V, IGBT_E=800v, fin=10MHz, IGBT_G load=3nF. Parameter Symbol Test Conditions LX1801 Typ Units Min Max Voltage...us us us us E ELECTRICALS Copyright 2001 Rev. 0.2b, 2002-06-17 Microsemi Carlsbad Divisio...
Description	PLUG for MED427A-1
File Size	143.12K / 5 Page	View it Online	Download Datasheet

				Microsemi
Part No.	LX1802
OCR Text	...est conditions: vhi=16v, igbt_e=800v, fin=10mhz, igbt_g load=3nf. lx1801 parameter symbol test conditions min typ max units vo...us fall time for igbt_g t fall,g -90%-10%*igbt_g(pk) 5 us enable time for igbt_g t en,g -...
Description	High Voltage 1/2 Bridge Defibrillator Switch
File Size	137.06K / 4 Page	View it Online	Download Datasheet

				TSC[Taiwan Semiconductor Company, Ltd]
Part No.	TS13003HVCTB0 TS13003HV TS13003HVCTA3
OCR Text	..., IE = 0 IE = 1mA, IC = 0 VCB = 800v, IE = 0 VEB = 10V, IC = 0 IC / IB = 1.5A / 0.5A IC / IB = 0.5A / 0.1A VCE = 10V, IC = 10uA VCE = 10V, I...us us us V V V uA uA V Conditions Symbol Min Typ Max Unit Note : pulse test: pu...
Description	High Voltage NPN Transistor
File Size	47.93K / 3 Page	View it Online	Download Datasheet

				Winsem Technology
Part No.	WTBV53DM WTBV53DMR
OCR Text	... bv ceo : 400v ? bv cbo : 800v ? i c : 2.5a ...us storage time t stg 3 6 us fall time t f 0.2 0.7 us ...
Description	POWER TRANSISTOR
File Size	417.98K / 5 Page	View it Online	Download Datasheet

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