| |
|
 |
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Part No. |
KM29U128T
|
| OCR Text |
... program operation programs the 528-byte page in typically 200 m s and an erase operation can be performed in typ- ically 2ms on a 16k-byte block. data in the page can be read out at 50ns cycle time per byte. the i/o pins serve as the ports... |
| Description |
16M x 8 Bit NAND Flash Memory
|
| File Size |
484.80K /
26 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
聚兴科技股份有限公司
|
| Part No. |
AT45DB321-TI
|
| OCR Text |
...rase and program) ? 8192 pages (528 bytes/page) main memory optional page and block erase operations two 528-byte sram data buffers ? allows receiving of data while reprogramming of nonvolatile memory internal program and control tim... |
| Description |
|
| File Size |
157.87K /
21 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|