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  5.0-110 Datasheet PDF File

For 5.0-110 Found Datasheets File :: 103731    Search Time::2.656ms    
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    2SA608 2SA608N 2SC536N

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA608 2SA608N 2SC536N
OCR Text ...t:mm 2164 [2SA608N/2SC536N] 4.5 3.7 Features * Large current capacity and wide ASO. 0.45 3.5 1.4max 0.6 1.27 4.0max 13.7 14.0 0.5 0.45 4.5 0.44 1 2.5 2 2.5 3 ( ) : 2SA608N Specifications Abs...
Description    Low-Frequency General-Purpose Amplifier Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications
NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications

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    2SA838

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SA838
OCR Text 5.00.2 Unit: mm 4.00.2 q High transition frequency fT. s Absolute Maximum Ratings Parameter Collector to base voltage Collecto...0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Emitter 2:Collec...
Description Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)

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    2SB631 2SB631K 2SD600 2SD600K

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2SB631 2SB631K 2SD600 2SD600K
OCR Text ...2SB631K, D600K (-)120 (-)120 (-)5 (-)1 (-)2 1 Unit V V V A A W W Tc=25C Tj Tstg 8 150 -55 to +150 C C Electrical Characteris...0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO ICBO IEBO IE=(-)10A, IC=0 VCB=(-)50V, IE=0 VEB=(-)4V, IC=0 Condi...
Description NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amp Applications
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency Power Amp Applications
PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体

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    2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2
OCR Text ...-0.05 FEATURES * * * 0.5 High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz) Ultra Super Mini Mold Package. (1.6 mm x 0.8 mm) 1.6 0.1 1.0 0.2+0.1 -0 0.5 ...
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模
NPN epitaxial-type silicon transistor

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    2SC5008 2SC5008-T1 2SC5008NE68019 2SC5008-T1-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5008 2SC5008-T1 2SC5008NE68019 2SC5008-T1-T2
OCR Text ...limeters 1.6 0.1 0.8 0.1 2 0.5 1.6 0.1 1.0 0.2+0.1 -0 0.3 +0.1 -0 0.15 +0.1 -0.05 0.5 FEATURES * Low Voltage Use. * High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) * Low NF: 1.9 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 G...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits

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    2SC5009 2SC5009-T1 2SC5009-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text ...1.6 0.1 0.8 0.1 2 0.2+0.1 -0 0.5 0.3 +0.1 -0 0.15 +0.1 -0.05 0.5 FEATURES * Low Voltage Use. * High fT * Low Cre * Low NF * High : 12.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) 8.5...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

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    2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text ... Gain Bandwidth Product (fT = 6.5 GHz TYP.) * Low Noise, High Gain * Low Voltage Operation 2.0 0.2 0.60 0.65 PACKAGE DIMENSIONS in millimeters 0.3 +0.1 -0.05 2.1 0.2 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) (1.3) XYZ ORDER...
Description NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5012 2SC5012-T1 2SC5012-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5012 2SC5012-T1 2SC5012-T2
OCR Text ...VCEO VEBO IC PT Tj Tstg 20 10 1.5 65 150 150 -65 to +150 V V V mA mW C C Caution; Electrostatic Sensitive Device. Document No. P10400E...0.3 +0.1 -0.05 0.15 +0.1 -0.05 PART NUMBER QUANTITY PACKING STYLE (1.25) 2 3 19...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB

NEC[NEC]
NEC Corp.
Part No. 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text ...VCEO VEBO IC PT Tj Tstg 20 10 1.5 35 150 150 -65 to +150 V V V mA mW C C Caution; Electrostatic Sensitive Device. Document No. P10401E...0.3 +0.1 -0.05 0.15 +0.1 -0.05 1993 2SC5013 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTER...
Description L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ...Cre |S21e|2 NF 9 75 12 0.2 11 2.5 4.0 0.4 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 5 mA*1 VCE = 3 V, IC = 5 mA VCB = 3 V, IE = 0, f = 1 MHz*2 VCE = 3 V, IC = 5 mA,f = 2....
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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