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Advanced Power Technology, Ltd.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT1003RSLL APT1003RBLL
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| OCR Text |
4a 3.00
R
MOSFET
TO-247
D3PAK
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFE...500v ID = 4a @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500v ID = 4a @ 25C RG = 1.6 6 INDUCTIVE SWITC... |
| Description |
POWER MOS 7 MOSFET MOSFET的功率MOS 7
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| File Size |
99.14K /
5 Page |
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Alpha & Omega Semiconductors
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| Part No. |
AOTF8N50 AOT8N50
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| OCR Text |
...0V VDS=VGS, ID=250A VGS=10V, ID=4a VDS=40V, ID=4a 3.4 4 0.63 10 0.73 1 8 30 694 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 74 6.2 2 868 93 7.8 4 23.6 VGS=10V, VDS=400V, ID=8A 5.2 10.6 19.5 VGS=10V, VDS=250V, ID=8A, RG=25 IF=8A,dI/dt=100... |
| Description |
500v, 8A N-Channel MOSFET
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| File Size |
144.22K /
6 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRM9230D FRM9230H FRM9230R FN3263
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| OCR Text |
4a, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs
Package
TO-204aA
Features
* 4a, -200V, RDS(on) = 1.30 * Second Generation Rad H...500v, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and... |
| Description |
4a/ -200V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFETs
4a, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system
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| File Size |
56.76K /
6 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8M100S APT8M100B
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| OCR Text |
... 25C, ID = 250A VGS = 10V, ID = 4a VGS = VDS, ID = 1mA VDS = 1000V VGS = 0V TJ = 25C TJ = 125C
APT8M100B_S
Typ 1.15 1.53 4 -10 Max Unit ...500v Resistive Switching VDD = 667V, ID = 4a RG = 10 6 , VGG = 15V
33 60 10 27 8.5 7.8 29 7.2
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| Description |
N-Channel MOSFET
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| File Size |
250.63K /
4 Page |
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SEME-LAB[Seme LAB]
TT electronics Semelab Limited
TT electronics Semelab, Ltd.
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| Part No. |
BUL53B
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| OCR Text |
...52612.
500v 250V 10V 12A 24a 4a 90W -55 to +150C
Prelim. 2/97
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
BUL53B
Test Conditions
Min.
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| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 12 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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| File Size |
19.00K /
2 Page |
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Price and Availability
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