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Powerex Power Semiconductor... Mitsubishi Electric Corporation
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Part No. |
FK30SM-5
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OCR Text |
4.5 1.5 f 3.2 5.0 20.0 19.5min. 2 1.0 5.45 4.4 0.6 2.8 qwe 5.45 2 4 4 r wr q e q gate w drain e source r drain v dss ................................................................................ 250v r ds (on) (max) ................. |
Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE Power MOSFETs: FK Series, 250V Class
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File Size |
62.88K /
5 Page |
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Mitsubishi Electric Corporation
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Part No. |
FK16SM-5
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OCR Text |
...16 48 125 C55 ~ +150 C55 ~ +150 4.8 v dss v gss i d i dm i s i sm p d t ch t stg v v a a a a w c c g drain-source voltage gate-source vol...5 high-speed switching use application servo motor drive, robot, ups, inverter fluorecent lamp, etc.... |
Description |
Power MOSFETs: FK Series, 250V Class
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File Size |
64.40K /
5 Page |
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Hynix Semiconductor, Inc.
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Part No. |
HY5DV641622AT-5
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OCR Text |
... hy5dv641622at revision history 4. revision 0.7 (may. 02) 1) input leakage current chan ged from +/-5ua to +/-2ua 3. revision 0.6 (de...5 (nov. 01) 1) changed tck maximum value a) 300/275mhz : changed from 4.5ns to 4.0ns ... |
Description |
64M(4Mx16) DDR SDRAM 4M X 16 DDR DRAM, 0.5 ns, PDSO66
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File Size |
278.28K /
27 Page |
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Hynix Semiconductor, Inc.
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Part No. |
HY5DV281622DT-5 HY5DV281622DT-36 HY5DV281622DT-33
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OCR Text |
...tck_max. value of hy5dv281622dt-4/5/6 from 7.5ns to 7.0ns feb. 2003 0.4 changed vdd/vddq max range of hy5dv281622dt-33/36 aug. 2003 0.5 changed tras_max value from 120k to 100k in all frequency aug. 2003
hy5dv281622dt rev. 0.5 / aug. 200... |
Description |
128M(8Mx16) GDDR SDRAM 8M X 16 DDR DRAM, 0.7 ns, PDSO66
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File Size |
289.31K /
31 Page |
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it Online |
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