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NXP Semiconductors N.V.
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Part No. |
PSMN027-100BS
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OCR Text |
...25c; v gs =10v; see figure 1 --37a p tot total power dissipation t mb =25c; see figure 2 - - 103 w t j junction temperature -55 - 175 c static characteristics r dson drain-source on-state resistance v gs =10v; i d =15a; t j = 100 c; see ... |
Description |
N-channel 100V 26.8 m standard level MOSFET in D2PAK.
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File Size |
197.75K /
14 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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Part No. |
IRL3102PBF
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OCR Text |
...ID = 1mA 0.015 VGS = 4.5V, ID = 37a 0.013 VGS = 7.0V, ID = 37a V VDS = VGS , ID = 250A S VDS = 16V, ID = 35A 25 VDS = 20V, VGS = 0V A 250 VDS = 10V, V GS = 0V, TJ = 150C 100 VGS = 10V nA -100 VGS = -10V 58 ID = 35A 14 nC VDS = 16V 21 V... |
Description |
HEXFET Power MOSFET
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File Size |
128.67K /
7 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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Part No. |
PSMN027-100PS
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OCR Text |
...5c; v gs =10v; see figure 1 --37a p tot total power dissipation t mb =25c; see figure 2 --103w t j junction temperature -55 - 175 c static characteristics r dson drain-source on-state resistance v gs =10v; i d =15a; t j = 100 c; see f... |
Description |
N-channel 100V 26.8 m standard level MOSFET in TO220.
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File Size |
202.57K /
14 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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Part No. |
PSMN011-30YLC
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OCR Text |
...25c; v gs =10v; see figure 1 --37a p tot total power dissipation t mb =25c; see figure 2 --29w t j junction temperature -55 - 175 c static characteristics r dson drain-source on-state resistance v gs =4.5v; i d =10a; t j =25c; see figur... |
Description |
N-channel 30 V 11.6 m logic level MOSFET in LFPAK using NextPower technology N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology
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File Size |
310.74K /
15 Page |
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it Online |
Download Datasheet
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Price and Availability
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