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Toshiba
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| Part No. |
TC58NVG2D4BFT00
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| OCR Text |
...048 blocks. the device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. the erase operation is implemented in a single block un... |
| Description |
4 GBIT (512M X 8 BIT) CMOS NAND E2PROM
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| File Size |
646.77K /
61 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
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| Part No. |
MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3
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| OCR Text |
... 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third ... |
| Description |
RF POWER FIELD EFFECT TRANSISTORS
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| File Size |
553.35K /
12 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S
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| OCR Text |
... 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third ... |
| Description |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
395.61K /
12 Page |
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it Online |
Download Datasheet |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
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| OCR Text |
... 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third ... |
| Description |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
561.39K /
12 Page |
View
it Online |
Download Datasheet |
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