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  2.60-3.95 Datasheet PDF File

For 2.60-3.95 Found Datasheets File :: 114357    Search Time::2.313ms    
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    2SC5012 2SC5012-T1 2SC5012-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5012 2SC5012-T1 2SC5012-T2
OCR Text ...AGE DIMENSIONS in millimeters 2.1 0.2 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) (1.3) ORDERING INFORMATION 2.0 0.2 0.60 0.65 XYZ 1 4 2SC5012-T1 3 Kpcs/Reel. 2SC5012-T2 3 Kpcs/Reel. Embossed tape 8 mm wide....
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.43K  /  7 Page

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ...h Gain * Low Voltage Operation 2.1 0.2 1.25 0.1 PACKAGE DIMENSIONS in millimeters ORDERING INFORMATION 2 3 2.0 0.2 PART NUMBER 2...60 0.3 +0.1 -0.05 1 2SC5014-T2 3 Kpcs/Reel. * Please contact with responsible NEC per...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 48.18K  /  8 Page

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ...KAGE DIMENSIONS in millimeters 2.1 0.2 0.3 +0.1 -0.05 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) 1 4 0.4 +0.1 -0.05 2SC...60 0.65 T83 2 3 1993 2SC5015 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC ...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.94K  /  8 Page

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    2SC5078

HITACHI[Hitachi Semiconductor]
Part No. 2SC5078
OCR Text 2SC5078 Silicon NPN Epitaxial ADE-208-221 1st. Edition Application VHF / UHF wide band amplifier Features * High gain bandwidth ...60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 3 / div. 60 -150 ...
Description    Silicon NPN Epitaxial

File Size 44.24K  /  7 Page

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    2SC5080

HITACHI[Hitachi Semiconductor]
Part No. 2SC5080
OCR Text 2SC5080 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features * High gain bandwidth product fT = 13.5 GHz Typ * ...60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 5 / div. 60 -150 ...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 47.56K  /  8 Page

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    2SD1030

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1030
OCR Text 2.8 -0.3 +0.2 s Features q q q q q 0.650.15 +0.25 1.5 -0.05 0.650.15 +0.2 1.1 -0.1 s Absolute Maximum Ratings Paramet...60 40 20 IB=100A 90A 80A 70A 60A 50A 40A 30A 20A 10A 160 120 Collector current IC (mA) ...
Description Silicon NPN epitaxial planer type(For low-frequency amplification) 50 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236

File Size 36.07K  /  2 Page

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    2SD1149

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1149
OCR Text 2 2.8 -0.3 s Features q q q q 0.650.15 1.5 -0.05 +0.25 0.650.15 +0.2 1.1 -0.1 Parameter Collector to base voltage C...60 VCE=10V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 60 50...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 38.00K  /  2 Page

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    2SD601A 2SD0601 2SD0601A 2SB709A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD601A 2SD0601 2SD0601A 2SB709A
OCR Text 2.8 -0.3 +0.2 Unit: mm s Features q q q 0.650.15 +0.25 1.5 -0.05 0.650.15 High foward current transfer ratio hFE. Low co...60 50 7 200 100 200 150 -55 ~ +150 Unit V V V mA mA mW C C 0.95 2.9 -0.05 1 1.90.2 +0...
Description    Silicon NPN epitaxial planer type

File Size 37.72K  /  2 Page

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    2SD602 2SD602A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SD602 2SD602A
OCR Text ... Unit: mm s Features q q 2.8 -0.3 0.650.15 +0.2 2.9 -0.05 1.90.2 +0.2 Low collector to emitter saturation voltage VCE(...60 25 50 5 1 500 200 150 -55 ~ +150 V emitter voltage 2SD602A Emitter to base voltage Peak col...
Description Silicon NPN epitaxial planer type

File Size 38.99K  /  2 Page

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    2SD620 2SK620

PANASONIC[Panasonic Semiconductor]
Part No. 2SD620 2SK620
OCR Text 2.8 -0.3 +0.2 unit: mm 0.650.15 s Features q High-speed switching q Mini-type package, allowing downsizing of the sets and automati...60 | Yfs | VGS Forward transfer admittance |Yfs| (mS) Ta=25C VDS=5V Ta=25C 50 Allowable pow...
Description Silicon N-Channel MOS FET

File Size 35.23K  /  2 Page

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