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Solid States Devices, I...
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| Part No. |
TR0003-15
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| OCR Text |
...ector-emitter voltage ( r be = 1ks) 400 1000 total device dissipation @ t c = 25 o c @ t a = 25 o c derate above @ t c = 25 o c 1.0 0.4 5.7 thermal resistance, junction to case junct... |
| Description |
NPN TRANSISTOR
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| File Size |
53.27K /
2 Page |
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http://
SSDI[Solid States Devices, Inc]
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| Part No. |
SFT8600_4 SFT8600-4 SFT8600/4
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| OCR Text |
...lector-Emitter Voltage ( R BE = 1kS) Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25oC @ TA = 25oC o Derate above @ T C = 25 C Operating and Storage Temperature Thermal Resistanc... |
| Description |
1 AMP 1000 VOLTS NPN TRANSISTOR
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| File Size |
52.95K /
2 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
BCV61C BCV61 BCV61B BCV61A
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| OCR Text |
...atings Parameter
Marking 1Js 1Ks 1Ls 1 = C2 1 = C2 1 = C2
Pin Configuration 2 = C1 2 = C1 2 = C1 3 = E1 3 = E1 3 = E1 4 = E2 4 = E2 4 ...R E range with I E2 as parameter under condition of I C1/I E2 = 1.3
A C1 2 1
VCE1 ...
T1
... |
| Description |
NPN Silicon Double Transistor NPN硅双晶体
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| File Size |
48.17K /
5 Page |
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it Online |
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SUNMATE electronic Co.,...
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| Part No. |
1SMB90A 1SMB26CA 1SMB78CA 1SMB90CA 1SMB5.0CA
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| OCR Text |
... 1kv 1au 1ku 1at 1kt 1as 1ks 1ar 1kr 1aq 1kq 1ap 1kp 1an 1kn 1am 1km 1al 1kl 1ak 1kk 1ah 1kh 1ag 1kg 1af 1kf 1ae...r (ua) 5.0 6.40 7.55 10 9.6 62.5 800.0 6.40 7.25 10 9.2 65.2 800.0 6.67 8.45 10 11.... |
| Description |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE
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| File Size |
895.91K /
5 Page |
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