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108.001 Datasheet PDF File

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				ADPOW[Advanced Power Technology]
Part No.	APT5020BN APT5022BN
OCR Text	...500 28 112 30 360 2.9 500 27 108 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation ...001 10-5 10-4 0.02 0.01 Note: PDM t1 t2 2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t 050-50...
Description	POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	51.03K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030B2VR
OCR Text	...0B2VR UNIT Volts Amps 800 27 108 30 40 520 4.16 -55 to 150 300 27 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient T...001 10-5 JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFEC...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.13K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8030JN APT8035JN
OCR Text	...VOLTAGE POWER MOSFETS 800 27 108 30 520 4.16 800 25 100 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltag...001 10-5 10-4 Note: PDM t1 t2 Duty Factor D = t1/t2 050-8037 Rev F Z JC Peak TJ =...
Description	POTENTIOMETER, 1.5W 50K POTENTIOMETER, 1.5W 50K; VARIABLE ROTARY WIREWOUND; RESISTANCE, TRACK:50KR; SERIES:535; POWER RATING:1.5W; CASE STYLE:PANEL MOUNT; DIAMETER, BODY:22.2MM; DIAMETER, SHAFT:6.35MM; TURNS, NO. RoHS Compliant: Yes N沟道增强型高压功率MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS V 800V 27.0A 0.30/0.35 Ohm
File Size	61.59K / 4 Page	View it Online	Download Datasheet

				Microsemi Corporation ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT8030LVFR APT8030LVFRG
OCR Text	...0LVFR UNIT Volts Amps 800 27 108 30 40 520 4.16 -55 to 150 300 27 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current ...001 10-5 JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFEC...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	62.47K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030LVR
OCR Text	...30LVR UNIT Volts Amps 800 27 108 30 40 520 4.16 -55 to 150 300 27 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient T...001 10-5 JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFEC...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.26K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8030 APT8030B2VFR
OCR Text	...B2VFR UNIT Volts Amps 800 27 108 30 40 520 4.16 -55 to 150 300 27 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient T...001 10-5 JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFEC...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 27A 0.300 Ohm
File Size	60.47K / 4 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BY9400 BY9410 BY9412 BY9414 BY9416
OCR Text	...ohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku,...001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,...
Description	Fast high-voltage soft-recovery controlled avalanche rectifiers
File Size	54.02K / 8 Page	View it Online	Download Datasheet

				Comchip Technology Co., Ltd. COMCHIP[Comchip Technology]
Part No.	CZRC5386 CZRC5364 CZRC5349 CZRC5377 CZRC5387 CZRC5383 CZRC5380 CZRC5388 CZRC53 CZRC5348 CZRC5350 CZRC5351 CZRC5352 CZRC5353 CZRC5354 CZRC5355 CZRC5356 CZRC5357 CZRC5358 CZRC5359 CZRC5360 CZRC5361 CZRC5362 CZRC5363 CZRC5365 CZRC5366 CZRC5367 CZRC5368 CZRC5369 CZRC5370 CZRC5371 CZRC5372 CZRC5373 CZRC5374 CZRC5375 CZRC5376 CZRC5378 CZRC5379 CZRC5381 CZRC5382 CZRC5384 CZRC5385 COMCHIPTECHNOLOGYCO.LTD.-CZRC5365
OCR Text	... SMC/DO-214AB 0.124(3.15) 0.108(2.75) 0.280(7.11) 0.260(6.60) 0.245(6.22) 0.220(5.59) Mechanical data 0.103(2.62) 0.079(2.00) ...001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 TIME (SEC...
Description	Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode Surface Mount Zener Diode
File Size	88.58K / 4 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF134
OCR Text	...89 - 92 - 94 - 97 - 100 - 104 - 108 - 113 - 117 - 120 - 123 - 125 - 127 - 129 - 131 - 132 - 133 - 135 - 137 - 138 - 140 \|S21\| 11.27 11.27 11.26 11.20 10.99 10.66 10.25 9.777 9.359 8.960 8.583 8.190 7.808 7.661 7.515 7.368 7.222 7.075 6.810 ...
Description	N-CHANNEL MOS BROADBAND RF POWER FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	205.26K / 10 Page	View it Online	Download Datasheet

				MITEL[Mitel Networks Corporation]
Part No.	PDSP16350
OCR Text	...100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 SIG GND ...001 Hz. This can be improved by reducing the clock frequency, with the Nyquist restraint being the l...
Description	I/Q Splitter/NCO
File Size	313.80K / 15 Page	View it Online	Download Datasheet

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