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ADPOW[Advanced Power Technology]
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| Part No. |
APT11044JFLL
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| OCR Text |
...
0.02037F
Power (watts)
0.0651
0.173F
0.123 Case temperature. (C)
0.490F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 70
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX. 250 S... |
| Description |
POWER MOS 7 FREDFET
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| File Size |
100.39K /
5 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT12057JFLL
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| OCR Text |
...
0.0203F
Power (watts)
0.0651
0.173F
6V
0.123 Case temperature. (C)
0.490F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) ... |
| Description |
POWER MOS 7 FREDFET
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| File Size |
165.68K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT30M30JFLL
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| OCR Text |
...S 1.40
V
Power (Watts)
0.0651
0.173F
0.123 Case temperature
0.490F
50
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
250
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON)... |
| Description |
POWER MOS 7 FREDFET
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| File Size |
147.77K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT30M30JLL_04 APT30M30JLL APT30M30JLL04
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| OCR Text |
...S 1.40
V
Power (Watts)
0.0651
0.173F
0.123 Case temperature
0.490F
50
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
250
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON)... |
| Description |
POWER MOS 7 R MOSFET
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| File Size |
146.87K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M65JFLL_03 APT50M65JFLL APT50M65JFLL03
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| OCR Text |
...
8V
7V
Power (Watts)
0.0651
0.173F
6.5V
6V 40 20 0 5.5V 5V
0.123 Case temperature
0.490F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOUR... |
| Description |
POWER MOS 7 R FREDFET
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| File Size |
99.79K /
5 Page |
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it Online |
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eupec GmbH
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| Part No. |
BSM50GB60DLC
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| OCR Text |
...6 0,0240 270,4 0,0169 3 155,1 0,0651 169,8 0,1069 4 35,7 0,6626 77,9 0,9115
: IGBT : IGBT : Diode : Diode
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA)
120
VGE= +15V, R G,off = 2,7, Tvj= 125C ,
100
... |
| Description |
IGBT-Module
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| File Size |
92.62K /
9 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT55M85JFLL
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| OCR Text |
...
Power (Watts)
80 6.5V
0.0651
0.173F
40
6V 5.5V
0.123 Case temperature
0.490F
0
5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
140 120 100 80 60 40 20 0 0 2 4 6 8 VGS... |
| Description |
POWER MOS 7 FREDFET
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| File Size |
68.58K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8020JFLL
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| OCR Text |
...er (Watts) 0.0203 0.173 0.490 0.0651
TC ( C)
0.123
ZEXT
6V 20 5.5V 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
ZEXT are the external thermal impedances: Ca... |
| Description |
40 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
256.97K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT8020JLL_04 APT8020JLL04
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| OCR Text |
...
0.0203F
Power (watts)
0.0651
0.173F
0.123 Case temperature. (C)
0.490F
5.5V 5V
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 100 80 60 TJ = +125C 40 20 0 TJ = +25C TJ = -55C... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
159.01K /
5 Page |
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it Online |
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EUPEC[eupec GmbH]
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| Part No. |
BSM150GB60DLC
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| OCR Text |
...,0 0,0240 135,2 0,0169 3 74,0 0,0651 84,9 0,1069 4 17,0 0,6626 38,9 0,9115
: IGBT : IGBT : Diode : Diode
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA)
350 300 250 200 150 IC,Modul 100 50 0 0 100 200 300 400... |
| Description |
IGBT-Modules
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| File Size |
74.09K /
8 Page |
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it Online |
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Price and Availability
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